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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N404A
2N404A
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-5 PNP - -
TIP117
TIP117
Solid State Devices Inc (SSDI)
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 2 A 1000 @ 1A, 4V - Through Hole -65°C ~ 150°C (TJ) 50 W TO-220 PNP - Darlington 2.5V @ 8mA, 2A 100 V
TIP29A
TIP29A
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-220 NPN - -
D44C10
D44C10
Solid State Devices Inc (SSDI)
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 4 A 25 @ 1A, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 100mA, 1A 80 V
D44C4
D44C4
Solid State Devices Inc (SSDI)
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 4 A 25 @ 1A, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 100mA, 1A 45 V
TIP29
TIP29
Solid State Devices Inc (SSDI)
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 1 A 40 @ 200mA, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 30 W TO-220 NPN 700mV @ 125mA, 1A 40 V
TIP112
TIP112
Solid State Devices Inc (SSDI)
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 2 A 1000 @ 1A, 4V - Through Hole -65°C ~ 150°C (TJ) 50 W TO-220 NPN - Darlington 2.5V @ 8mA, 2A 100 V
2N5193
2N5193
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-126 PNP - -
TIP116
TIP116
Solid State Devices Inc (SSDI)
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 2 A 1000 @ 1A, 4V - Through Hole -65°C ~ 150°C (TJ) 50 W TO-220 PNP - Darlington 2.5V @ 8mA, 2A 80 V
D44C5
D44C5
Solid State Devices Inc (SSDI)
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 4 A 100 @ 200mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 50mA, 1A 45 V
D44C8
D44C8
Solid State Devices Inc (SSDI)
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 4 A 100 @ 200mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 50mA, 1A 60 V
D44C6
D44C6
Solid State Devices Inc (SSDI)
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 4 A 40 @ 200mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 50mA, 1A 45 V
2N4037
2N4037
Solid State Devices Inc (SSDI)
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 1 A 50 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 PNP 1.4V @ 15mA, 150mA 40 V
D44C3
D44C3
Solid State Devices Inc (SSDI)
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 4 A 40 @ 200mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 50mA, 1A 30 V
TIP110
TIP110
Solid State Devices Inc (SSDI)
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 2 A 1000 @ 1A, 4V - Through Hole -65°C ~ 150°C (TJ) 50 W TO-220 NPN - Darlington 2.5V @ 8mA, 2A 60 V
D44C9
D44C9
Solid State Devices Inc (SSDI)
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 4 A 40 @ 200mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 50mA, 1A 60 V
D44C7
D44C7
Solid State Devices Inc (SSDI)
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 4 A 25 @ 1A, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 100mA, 1A 60 V
2N5195
2N5195
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-126 PNP - -
D44H11
D44H11
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-220 NPN - -
D44C11
D44C11
Solid State Devices Inc (SSDI)
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 4 A 100 @ 200mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 50mA, 1A 80 V
2N4032
2N4032
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-39 PNP - -
TIP115
TIP115
Solid State Devices Inc (SSDI)
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 2 A 1000 @ 1A, 4V - Through Hole -65°C ~ 150°C (TJ) 50 W TO-220 PNP - Darlington 2.5V @ 8mA, 2A 60 V
2N5680
2N5680
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-39 PNP - -
D45C8
D45C8
Solid State Devices Inc (SSDI)
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 4 A 40 @ 200mA, 1V 40MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 PNP 500mV @ 50mA, 1A 60 V
D45C9
D45C9
Solid State Devices Inc (SSDI)
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 4 A 40 @ 200mA, 1V 40MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 PNP 500mV @ 50mA, 1A 60 V
2N3053A
2N3053A
Solid State Devices Inc (SSDI)
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 700 mA 50 @ 150mA, 10V 100MHz Through Hole -65°C ~ 200°C (TJ) 5 W TO-39 NPN 300mV @ 15mA, 150mA 60 V
D44C1
D44C1
Solid State Devices Inc (SSDI)
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 4 A 25 @ 200mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 30 W TO-220 NPN 500mV @ 100mA, 1A 30 V
TIP31B
TIP31B
Solid State Devices Inc (SSDI)
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 3 A 25 @ 1A, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 40 W TO-220 NPN 1.2V @ 375mA, 3A 80 V
TIP32A
TIP32A
Solid State Devices Inc (SSDI)
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 3 A 25 @ 1A, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 40 W TO-220 PNP 1.2V @ 375mA, 3A 60 V
TIP32
TIP32
Solid State Devices Inc (SSDI)
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 3 A 25 @ 1A, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 40 W TO-220 PNP 1.2V @ 375mA, 3A 40 V
2N2896
2N2896
Solid State Devices Inc (SSDI)
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 1 A 60 @ 150mA, 10V 120MHz Through Hole -65°C ~ 200°C (TJ) 500 mW TO-18 NPN 600mV @ 15mA, 150mA 90 V
TIP30A
TIP30A
Solid State Devices Inc (SSDI)
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 1 A 40 @ 200mA, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 30 W TO-220 PNP 700mV @ 125mA, 1A 60 V
2N2897
2N2897
Solid State Devices Inc (SSDI)
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 1 A 50 @ 150mA, 10V 100MHz Through Hole -65°C ~ 200°C (TJ) 500 mW TO-18 NPN 1V @ 15mA, 150mA 45 V
TIP31C
TIP31C
Solid State Devices Inc (SSDI)
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 3 A 25 @ 1A, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 40 W TO-220 NPN 1.2V @ 375mA, 3A 100 V
TIP30
TIP30
Solid State Devices Inc (SSDI)
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 1 A 40 @ 200mA, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 30 W TO-220 PNP 700mV @ 125mA, 1A 40 V
TIP31A
TIP31A
Solid State Devices Inc (SSDI)
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 3 A 25 @ 1A, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 40 W TO-220 NPN 1.2V @ 375mA, 3A 60 V
TIP32B
TIP32B
Solid State Devices Inc (SSDI)
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 3 A 25 @ 1A, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 40 W TO-220 PNP 1.2V @ 375mA, 3A 80 V
TIP30B
TIP30B
Solid State Devices Inc (SSDI)
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 1 A 40 @ 200mA, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 30 W TO-220 PNP 700mV @ 125mA, 1A 80 V
TIP32C
TIP32C
Solid State Devices Inc (SSDI)
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 3 A 25 @ 1A, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 40 W TO-220 PNP 1.2V @ 375mA, 3A 100 V
TIP31
TIP31
Solid State Devices Inc (SSDI)
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 3 A 25 @ 1A, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 40 W TO-220 NPN 1.2V @ 375mA, 3A 40 V
2N2895
2N2895
Solid State Devices Inc (SSDI)
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 1 A 20 @ 100µA, 10V 120MHz Through Hole -65°C ~ 200°C (TJ) 500 mW TO-18 NPN 600mV @ 15mA, 150mA 65 V
2N2904A
2N2904A
Solid State Devices Inc (SSDI)
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 600 mA 40 @ 150mA, 10V 200MHz Through Hole -65°C ~ 200°C (TJ) 600 mW TO-39 PNP 1.6V @ 50mA, 500mA 40 V
2N2904
2N2904
Solid State Devices Inc (SSDI)
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 600 mA 40 @ 150mA, 10V 200MHz Through Hole -65°C ~ 200°C (TJ) 600 mW TO-39 PNP 1.6V @ 50mA, 500mA 40 V
2N2907
2N2907
Solid State Devices Inc (SSDI)
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 600 mA 100 @ 150mA, 10V 200MHz Through Hole -65°C ~ 200°C (TJ) 400 mW TO-18 NPN 1.6V @ 50mA, 500mA 40 V
TIP30C
TIP30C
Solid State Devices Inc (SSDI)
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 1 A 40 @ 200mA, 4V 3MHz Through Hole -65°C ~ 150°C (TJ) 30 W TO-220 PNP 700mV @ 125mA, 1A 100 V
PART TRANSISTOR 2N2222
PART TRANSISTOR 2N2222
Gearbox Labs
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2SAR544R
2SAR544R
Download Datasheet for 2SAR544R
Diotec Semiconductor
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 2.5 A 120 @ 100mA, 3V 280MHz Surface Mount -55°C ~ 150°C (TJ) 500 mW SOT-23-3 (TO-236) PNP 400mV @ 50mA, 1A 80 V
D44VH1116
D44VH1116
Harris Semiconductor
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 - - - - - - - NPN - -
PZTA42
PZTA42
Download Datasheet for PZTA42
Diotec Semiconductor
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 500 mA 40 @ 30mA, 10V 50MHz Surface Mount -55°C ~ 150°C (TJ) 1.5 W SOT-223 NPN 500mV @ 2mA, 20mA 300 V
2SA1773E-E
2SA1773E-E
Download Datasheet for 2SA1773E-E
Sanyo Denki
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Showing 6551-6600 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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