What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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Micro Commercial
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5 µA @ 10.6 V | 12 Ω | Through Hole | -55°C ~ 150°C (TJ) | 200 mW | DO-41 | ±5% | 1.2 V @ 200 mA | |
Central Semiconductor Corp
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100 nA @ 14 V | 21 Ω | Surface Mount | -65°C ~ 150°C | 250 mW | SOD-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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100 nA @ 36 V | 105 Ω | Surface Mount | -65°C ~ 150°C | 250 mW | SOD-323 | ±5% | 900 mV @ 10 mA | |
On Semiconductor
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100 nA @ 11 V | 42 Ω | Surface Mount, Wettable Flank | -65°C ~ 150°C (TJ) | 250 mW | 2-X2DFNW (1x0.6) | ±2.3% | 900 mV @ 10 mA | |
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On Semiconductor
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100 nA @ 8 V | 30 Ω | Surface Mount, Wettable Flank | -65°C ~ 150°C (TJ) | 250 mW | 2-X2DFNW (1x0.6) | ±2.27% | 900 mV @ 10 mA | |
Vishay Dale
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20 µA @ 1.5 V | 8 Ω | Surface Mount | 150°C | 600 mW | DO-220AA (SMP) | ±6% | 1.5 V @ 200 mA | |
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Vishay Dale
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20 µA @ 3 V | 6 Ω | Surface Mount | 150°C | 600 mW | DO-220AA (SMP) | ±6% | 1.5 V @ 200 mA | |
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Vishay Dale
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200 µA @ 3 V | 5 Ω | Surface Mount | -65°C ~ 150°C | 500 mW | DO-220AA (SMP) | ±5% | 1.5 V @ 200 mA | |
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Vishay Dale
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200 µA @ 4 V | 2 Ω | Surface Mount | -65°C ~ 150°C | 500 mW | DO-220AA (SMP) | ±5% | 1.5 V @ 200 mA | |
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Nexperia USA Inc.
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34 nA @ 2.5 V | 700 Ω | Surface Mount | 150°C (TJ) | 250 mW | TO-236AB | ±4% | 900 mV @ 10 mA | |
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Micro Commercial
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5 µA @ 76 V | 350 Ω | Through Hole | -65°C ~ 150°C | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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Micro Commercial
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5 µA @ 69.2 V | 250 Ω | Through Hole | -65°C ~ 150°C | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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Micro Commercial
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5 µA @ 62.2 V | 200 Ω | Through Hole | -65°C ~ 150°C | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
Taiwan Semiconductor
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100 µA @ 1 V | 10 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 3.3 V | |
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Taiwan Semiconductor
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100 µA @ 1 V | 10 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 3.6 V | |
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Taiwan Semiconductor
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50 µA @ 1 V | 9 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 3.9 V | |
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Taiwan Semiconductor
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10 µA @ 1 V | 9 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 4.3 V | |
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Taiwan Semiconductor
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10 µA @ 1 V | 8 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 4.7 V | |
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Taiwan Semiconductor
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10 µA @ 1 V | 7 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 5.1 V | |
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Taiwan Semiconductor
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10 µA @ 2 V | 5 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 5.6 V | |
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Taiwan Semiconductor
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10 µA @ 3 V | 2 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 6.2 V | |
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Taiwan Semiconductor
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10 µA @ 4 V | 3.5 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 6.8 V | |
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Taiwan Semiconductor
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10 µA @ 5 V | 4 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 7.5 V | |
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Taiwan Semiconductor
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10 µA @ 6 V | 4.5 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 8.2 V | |
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Taiwan Semiconductor
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10 µA @ 7 V | 5 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 9.1 V | |
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Taiwan Semiconductor
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10 µA @ 7.6 V | 7 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 10 V | |
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Taiwan Semiconductor
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5 µA @ 8.4 V | 8 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 11 V | |
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Taiwan Semiconductor
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5 µA @ 9.1 V | 9 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 12 V | |
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Taiwan Semiconductor
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5 µA @ 9.9 V | 10 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 13 V | |
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Taiwan Semiconductor
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5 µA @ 11.4 V | 14 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 15 V | |
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Taiwan Semiconductor
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5 µA @ 12.2 V | 16 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 16 V | |
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Taiwan Semiconductor
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5 µA @ 13.7 V | 20 Ω | Surface Mount | 175°C (TJ) | 1 W | MELF | ±5% | 18 V | |
ROHM Semiconductor
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100 nA @ 10 V | 37 Ω | Surface Mount | -55°C ~ 150°C | 100 mW | VMN2 | ±2% | 13 V | |
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ROHM Semiconductor
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100 nA @ 11 V | 42 Ω | Surface Mount | -55°C ~ 150°C | 100 mW | VMN2 | ±2% | 15 V | |
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ROHM Semiconductor
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1 µA @ 2.5 V | 60 Ω | Surface Mount | -55°C ~ 150°C | 100 mW | VMN2 | ±2% | 5.6 V | |
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ROHM Semiconductor
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1 µA @ 3 V | 60 Ω | Surface Mount | -55°C ~ 150°C | 100 mW | VMN2 | ±2% | 6.2 V | |
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ROHM Semiconductor
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500 nA @ 4 V | 30 Ω | Surface Mount | -55°C ~ 150°C | 100 mW | VMN2 | ±2% | 7.5 V | |
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ROHM Semiconductor
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2 µA @ 1 V | 100 Ω | Surface Mount | -55°C ~ 150°C | 100 mW | VMN2 | ±2% | 4.7 V | |
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ROHM Semiconductor
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10 µA @ 1 V | 100 Ω | Surface Mount | 150°C (TJ) | 100 mW | VMN2 | ±3.29% | 3.72 V | |
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ROHM Semiconductor
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5 µA @ 1 V | 100 Ω | Surface Mount | 150°C (TJ) | 100 mW | VMN2 | ±3.46% | 3.9 V | |
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ROHM Semiconductor
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5 µA @ 1 V | 100 Ω | Surface Mount | 150°C (TJ) | 100 mW | VMN2 | ±3.02% | 4.3 V | |
On Semiconductor
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10 µA @ 1 V | 100 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-523 | ±6.67% | 900 mV @ 10 mA | |
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On Semiconductor
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1 µA @ 2 V | 40 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-523 | ±7.14% | 900 mV @ 10 mA | |
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On Semiconductor
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50 nA @ 16.8 V | 70 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-523 | ±5.79% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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100 nA @ 12 V | 17 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOT-23 | ±5% | 900 mV @ 10 mA | |
Diodes Incorporated
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50 nA @ 10.6 V | - | Surface Mount | -65°C ~ 150°C (TJ) | 200 mW | SOD-323 | ±5% | 900 mV @ 10 mA | |
Central Semiconductor Corp
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5 µA @ 76 V | 350 Ω | Through Hole | -65°C ~ 150°C | 1 W | DO-41 | ±5% | 1 V @ 500 mA | |
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Central Semiconductor Corp
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1 µA @ 1 V | 17 Ω | Through Hole | -65°C ~ 200°C | 500 mW | DO-35 | ±5% | 1.5 V @ 200 mA | |
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Central Semiconductor Corp
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1 µA @ 1 V | 11 Ω | Through Hole | -65°C ~ 200°C | 500 mW | DO-35 | ±5% | 1.5 V @ 200 mA | |
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Central Semiconductor Corp
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100 nA @ 1 V | 7 Ω | Through Hole | -65°C ~ 200°C | 500 mW | DO-35 | ±5% | 1.5 V @ 200 mA |
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