What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
Parts in this category
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc.
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5 µA @ 1 V | 90 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±1.94% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
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2 µA @ 4 V | 15 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±5.88% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
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3 µA @ 4 V | 10 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±6.45% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
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10 µA @ 1 V | 95 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±2% | 900 mV @ 10 mA | |
Micro Commercial
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1 µA @ 32.7 V | 53 Ω | Through Hole | -55°C ~ 150°C | 1.5 W | DO-41G | ±5% | 1.2 V @ 200 mA | |
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Micro Commercial
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1 µA @ 8.4 V | 5.5 Ω | Through Hole | -55°C ~ 150°C | 1.5 W | DO-41G | ±5% | 1.2 V @ 200 mA | |
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Micro Commercial
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1 µA @ 13.7 V | 12 Ω | Through Hole | -55°C ~ 150°C | 1.5 W | DO-41G | ±5% | 1.2 V @ 200 mA | |
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Micro Commercial
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5 µA @ 4 V | 2 Ω | Through Hole | -55°C ~ 150°C | 1.5 W | DO-41G | ±5% | 1.2 V @ 200 mA | |
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Micro Commercial
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1 µA @ 9.1 V | 6.5 Ω | Through Hole | -55°C ~ 150°C | 1.5 W | DO-41G | ±5% | 1.2 V @ 200 mA | |
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Micro Commercial
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1 µA @ 18.2 V | 19 Ω | Through Hole | -55°C ~ 150°C | 1.5 W | DO-41G | ±5% | 1.2 V @ 200 mA | |
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Micro Commercial
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1 µA @ 25.1 V | 33 Ω | Through Hole | -55°C ~ 150°C | 1.5 W | DO-41G | ±5% | 1.2 V @ 200 mA | |
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Micro Commercial
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1 µA @ 16.7 V | 17.5 Ω | Through Hole | -55°C ~ 150°C | 1.5 W | DO-41G | ±5% | 1.2 V @ 200 mA | |
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Micro Commercial
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1 µA @ 29.7 V | 45 Ω | Through Hole | -55°C ~ 150°C | 1.5 W | DO-41G | ±5% | 1.2 V @ 200 mA | |
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Micro Commercial
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1 µA @ 12.2 V | 10 Ω | Through Hole | -55°C ~ 150°C | 1.5 W | DO-41G | ±5% | 1.2 V @ 200 mA | |
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Comchip Technology
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100 nA @ 46 V | 170 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Comchip Technology
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100 nA @ 14 V | 23 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Semtech
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2 µA @ 62.2 V | 80 Ω | Surface Mount | -55°C ~ 175°C | 5 W | - | ±5% | 82 V | |
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Comchip Technology
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100 nA @ 17 V | 29 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Comchip Technology
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3 µA @ 6.5 V | 8 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Comchip Technology
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2 µA @ 8.4 V | 22 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Comchip Technology
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100 nA @ 18 V | 33 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Comchip Technology
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100 nA @ 19 V | 35 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Comchip Technology
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100 nA @ 13 V | 19 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Comchip Technology
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50 µA @ 1 V | 29 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Comchip Technology
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100 nA @ 23 V | 49 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Comchip Technology
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100 nA @ 36 V | 105 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Comchip Technology
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3 µA @ 6 V | 6 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Comchip Technology
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100 nA @ 43 V | 150 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Comchip Technology
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100 nA @ 12 V | 17 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Comchip Technology
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100 nA @ 56 V | 270 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Comchip Technology
|
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3 µA @ 8 V | 17 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
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Comchip Technology
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1 µA @ 9.1 V | 30 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | - | 1.1 V @ 200 mA | |
On Semiconductor
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50 nA @ 14 V | 55 Ω | Surface Mount | -65°C ~ 150°C | 500 mW | SOD-523 | ±6% | 900 mV @ 10 mA | |
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On Semiconductor
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Nexperia USA Inc.
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1 µA @ 5 V | 15 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±6.04% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
|
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50 nA @ 35.7 V | 180 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±5.88% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
|
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50 nA @ 16.8 V | 70 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±5.79% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
|
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50 nA @ 32.9 V | 170 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±1.91% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
|
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50 nA @ 21 V | 80 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±6.67% | 900 mV @ 10 mA | |
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Microchip Technology
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Nexperia USA Inc.
|
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50 nA @ 12.6 V | 45 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±2.22% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
|
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50 nA @ 27.3 V | 130 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±5.13% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
|
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200 nA @ 7 V | 20 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±2% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
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50 nA @ 52.5 V | 255 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±2% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
|
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50 nA @ 18.9 V | 80 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±1.85% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
|
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100 nA @ 8 V | 25 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±5.39% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
|
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50 nA @ 15.4 V | 55 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±1.82% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
|
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50 nA @ 39.2 V | 200 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±5% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
|
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500 nA @ 6 V | 15 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±1.98% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
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50 nA @ 16.8 V | 70 Ω | Surface Mount | 150°C (TJ) | 365 mW | DFN1006BD-2 | ±2.08% | 900 mV @ 10 mA |
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