What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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Central Semiconductor Corp
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100 µA @ 1 V | 30 Ω | Surface Mount | -65°C ~ 150°C | 500 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 µA @ 7 V | 10 Ω | Surface Mount | -65°C ~ 150°C | 500 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
On Semiconductor
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20 µA @ 1 V | 20 Ω | Through Hole | - | 1.3 W | DO-41G | ±5% | 1.2 V @ 200 mA | |
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Central Semiconductor Corp
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100 nA @ 19 V | 35 Ω | Surface Mount | -65°C ~ 150°C | 500 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
Central Semiconductor Corp
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50 nA @ 32.9 V | 180 Ω | Surface Mount | -65°C ~ 175°C | 250 mW | SOD-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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2 µA @ 4 V | 15 Ω | Surface Mount | -65°C ~ 175°C | 250 mW | SOD-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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1 µA @ 5 V | 15 Ω | Surface Mount | -65°C ~ 175°C | 250 mW | SOD-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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700 nA @ 5 V | 15 Ω | Surface Mount | -65°C ~ 175°C | 250 mW | SOD-323 | ±5% | 900 mV @ 10 mA | |
ROHM Semiconductor
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10 µA @ 9 V | - | Surface Mount | 150°C (TJ) | 500 mW | TUMD2M | ±10% | 13 V | |
Central Semiconductor Corp
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5 µA @ 4 V | 7 Ω | Surface Mount | -65°C ~ 175°C | 500 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 µA @ 5 V | 5 Ω | Surface Mount | -65°C ~ 150°C | 275 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 µA @ 6 V | 6 Ω | Surface Mount | -65°C ~ 150°C | 275 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 µA @ 8 V | 17 Ω | Surface Mount | -65°C ~ 150°C | 275 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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100 nA @ 15 V | 25 Ω | Surface Mount | -65°C ~ 150°C | 275 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
Vishay Dale
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10 µA @ 8 V | 5 Ω | Surface Mount | -65°C ~ 150°C | 500 mW | DO-214AC (SMA) | ±5% | 1.5 V @ 200 mA | |
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Vishay Dale
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500 nA @ 12 V | 15 Ω | Surface Mount | 150°C (TJ) | 1.25 W | DO-214AC (SMA) | ±5.63% | 1.2 V @ 200 mA | |
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Vishay Dale
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500 nA @ 15 V | 24 Ω | Surface Mount | 150°C (TJ) | 1.25 W | DO-214AC (SMA) | ±6% | 1.2 V @ 200 mA | |
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Vishay Dale
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500 nA @ 22 V | 30 Ω | Surface Mount | 150°C (TJ) | 1.25 W | DO-214AC (SMA) | ±6.67% | 1.2 V @ 200 mA | |
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Vishay Dale
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500 nA @ 7 V | 7 Ω | Surface Mount | 150°C (TJ) | 1.25 W | DO-214AC (SMA) | ±6% | 1.2 V @ 200 mA | |
Central Semiconductor Corp
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3 µA @ 1 V | 90 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOT-23 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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200 nA @ 7 V | 20 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOT-23 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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75 µA @ 1 V | 30 Ω | Surface Mount | -65°C ~ 150°C | 250 mW | SOD-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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100 nA @ 17 V | 29 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOT-23 | ±5% | 900 mV @ 10 mA | |
Vishay Dale
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1 µA @ 18 V | - | Surface Mount | -55°C ~ 150°C | 800 mW | DO-219AB (SMF) | - | 1.2 V @ 200 mA | |
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Central Semiconductor Corp
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50 µA @ 1 V | 29 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOT-23 | ±5% | 900 mV @ 10 mA | |
Renesas
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Vishay Dale
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100 µA @ 1 V | 8 Ω | Surface Mount | -65°C ~ 175°C | 800 mW | DO-219AB (SMF) | - | 1.2 V @ 200 mA | |
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Vishay Dale
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10 µA @ 2 V | 4 Ω | Surface Mount | -65°C ~ 175°C | 800 mW | DO-219AB (SMF) | - | 1.2 V @ 200 mA | |
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Central Semiconductor Corp
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100 nA @ 39 V | 125 Ω | Surface Mount | -65°C ~ 150°C | 500 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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100 nA @ 10 V | 13 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOT-23 | ±5% | 900 mV @ 10 mA | |
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Vishay Dale
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1 µA @ 36 V | 45 Ω | Surface Mount | -65°C ~ 175°C | 800 mW | DO-219AB (SMF) | - | 1.2 V @ 200 mA | |
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Central Semiconductor Corp
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5 µA @ 4 V | 7 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOT-23 | ±5% | 900 mV @ 10 mA | |
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Vishay Dale
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1 µA @ 110 V | 300 Ω | Surface Mount | -65°C ~ 175°C | 800 mW | DO-219AB (SMF) | - | 1.2 V @ 200 mA | |
Taiwan Semiconductor
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1 µA @ 150 V | 750 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | SOD-123W | ±5% | 1 V @ 200 mA | |
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Central Semiconductor Corp
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100 nA @ 21 V | 41 Ω | Surface Mount | -65°C ~ 150°C | 275 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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1 µA @ 1 V | 90 Ω | Surface Mount | -65°C ~ 175°C | 250 mW | SOD-323 | ±5% | 900 mV @ 10 mA | |
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Vishay Dale
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5 µA @ 56 V | 175 Ω | Surface Mount | -65°C ~ 150°C | 1 W | DO-214AC (SMA) | ±5% | 75 V | |
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Renesas
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On Semiconductor
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1 µA @ 5 V | 15 Ω | Through Hole | -65°C ~ 200°C | 500 mW | DO-35 | ±5% | 1.5 V @ 100 mA | |
On Semiconductor
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25 µA @ 1 V | 28 Ω | Surface Mount | 150°C (TJ) | 500 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
On Semiconductor
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2 µA @ 5.1 V | - | Surface Mount | - | 500 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
On Semiconductor
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3 µA @ 5 V | 5 Ω | Surface Mount | - | 300 mW | SOT-23 | ±5% | 900 mV @ 10 mA | |
On Semiconductor
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On Semiconductor
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3 µA @ 6 V | 6 Ω | Surface Mount | -55°C ~ 150°C | 500 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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On Semiconductor
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3 µA @ 6.5 V | 8 Ω | Surface Mount | -55°C ~ 150°C | 350 mW | SOT-23-3 | ±5% | 900 mV @ 10 mA | |
On Semiconductor
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2 µA @ 8.4 V | 22 Ω | Surface Mount | - | 300 mW | SOT-23 | ±5% | 900 mV @ 10 mA | |
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On Semiconductor
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5 µA @ 3.5 V | 7 Ω | Surface Mount | 150°C (TJ) | 250 mW | SOT-23-3 | ±5% | 900 mV @ 10 mA | |
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On Semiconductor
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50 nA @ 18.9 V | 80 Ω | Through Hole | -65°C ~ 200°C | 500 mW | DO-35 | ±5% | 1.5 V @ 100 mA | |
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On Semiconductor
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50 nA @ 39.2 V | 200 Ω | Through Hole | -65°C ~ 200°C | 500 mW | DO-35 | ±5% | 1.5 V @ 100 mA | |
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Microchip Technology
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