What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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Yangzhou Yangjie Electronic Technology Co.,Ltd
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3 µA @ 6 V | 6 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
Yangzhou Yangjie Electronic Technology Co.,Ltd
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3 µA @ 6.5 V | 8 Ω | Surface Mount | -55°C ~ 150°C | 500 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Yangzhou Yangjie Electronic Technology Co.,Ltd
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100 nA @ 27 V | 70 Ω | Surface Mount | -55°C ~ 150°C | 500 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Yangzhou Yangjie Electronic Technology Co.,Ltd
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1 µA @ 5 V | 15 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 150 mW | SOD-523 | ±6% | 900 mV @ 10 mA | |
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Yangzhou Yangjie Electronic Technology Co.,Ltd
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3 µA @ 4 V | 10 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 150 mW | SOD-523 | ±6.45% | 900 mV @ 10 mA | |
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Yangzhou Yangjie Electronic Technology Co.,Ltd
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2 µA @ 4 V | 15 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 150 mW | SOD-523 | ±5.88% | 900 mV @ 10 mA | |
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EIC SEMICONDUCTOR INC.
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10 µA @ 4 V | 3.5 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±10% | 1.2 V @ 200 mA | |
Renesas
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20 µA @ 1 V | 60 Ω | Surface Mount | 150°C (TJ) | 1 W | - | ±5.88% | 5.1 V | |
Diotec Semiconductor
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500 nA @ 83.6 V | 125 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 110 V | |
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Diotec Semiconductor
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500 nA @ 51.7 V | 44 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 68 V | |
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Diotec Semiconductor
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1 µA @ 9.9 V | 2.5 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 13 V | |
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Diotec Semiconductor
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500 nA @ 13.7 V | 2.5 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 18 V | |
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Diotec Semiconductor
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1 µA @ 10.6 V | 2.5 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 14 V | |
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Diotec Semiconductor
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500 nA @ 15.2 V | 3 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 20 V | |
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Diotec Semiconductor
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500 nA @ 62.2 V | 65 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 82 V | |
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Diotec Semiconductor
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500 nA @ 76 V | 90 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 100 V | |
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Diotec Semiconductor
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1 µA @ 12.2 V | 2.5 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 16 V | |
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Diotec Semiconductor
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500 nA @ 56 V | 45 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 75 V | |
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Diotec Semiconductor
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500 nA @ 35.8 V | 25 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 47 V | |
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Diotec Semiconductor
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500 nA @ 45.5 V | 40 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 60 V | |
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Diotec Semiconductor
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5 µA @ 8.4 V | 2.5 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 11 V | |
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Diotec Semiconductor
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10 µA @ 6.6 V | 2 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 8.7 V | |
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Diotec Semiconductor
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5 µA @ 7.6 V | 2 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 10 V | |
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Diotec Semiconductor
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500 nA @ 47.1 V | 42 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 62 V | |
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Diotec Semiconductor
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7.5 µA @ 6.9 V | 2 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 9.1 V | |
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Diotec Semiconductor
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500 nA @ 42.6 V | 35 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 56 V | |
EIC SEMICONDUCTOR INC.
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100 nA @ 1 V | 5 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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1 µA @ 251 V | 2200 Ω | Through Hole | -55°C ~ 175°C (TJ) | 3 W | DO-41 | ±5% | 2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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100 nA @ 1 V | 8 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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100 nA @ 1 V | 10 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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20 µA @ 3 V | 10 Ω | Surface Mount | 150°C (TJ) | 1 W | - | ±6.45% | 6.2 V | |
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EIC SEMICONDUCTOR INC.
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10 µA @ 1 V | 23 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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100 nA @ 1 V | 30 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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10 µA @ 1 V | 28 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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2 µA @ 1 V | 22 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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500 nA @ 11.4 V | 7 Ω | Through Hole | -55°C ~ 175°C (TJ) | 2 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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500 nA @ 114 V | 550 Ω | Through Hole | -55°C ~ 175°C (TJ) | 3 W | DO-41 | ±5% | 1.5 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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1 µA @ 1 V | 11 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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100 nA @ 1 V | 7 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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1 µA @ 1 V | 17 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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1 µA @ 13.7 V | 12 Ω | Through Hole | -65°C ~ 175°C (TJ) | 1.5 W | DO-41 | ±10% | 18 V | |
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EIC SEMICONDUCTOR INC.
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100 nA @ 1 V | 6 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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1 µA @ 12.2 V | 2.5 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-15 | ±5% | 1.2 V @ 1 A | |
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