ZXTP25100CFHTA PNP bipolar transistor rated for 100V collector-emitter breakdown and 1A collector current. Surface-mount SOT-23-3 package.
Mfr Part #:

ZXTP25100CFHTA

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
PNP bipolar transistor rated for 100V collector-emitter breakdown and 1A collector current. Surface-mount SOT-23-3 package.
✓ Total Stock: 2,912 pcs
$ Price Range: $0.05

ZXTP25100CFHTA Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,895 pcs
2895 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
17 pcs
17 pcs On Request 1 On Request On Request 17+ On Request On Request

ZXTP25100CFHTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
SVHC Present
Transistor Type

ZXTP25100CFHTA Description

Short technical summary and product information.

ZXTP25100CFHTA is a PNP bipolar junction transistor from Diodes Incorporated designed for general-purpose switching and amplification. It features a collector-emitter breakdown voltage of 100V and a maximum collector current of 1A, making it suitable for a range of medium-power applications. The transistor offers a DC current gain (hFE) of at least 200 at 10mA collector current and 2V collector-emitter voltage, providing consistent performance in linear and switching circuits.

 

The device has a low collector-emitter saturation voltage of 220mV at 100mA base current and 1A collector current, which helps reduce power loss in switching applications. With a transition frequency of 180MHz, it can handle moderate-speed signal processing and switching tasks. Maximum power dissipation is 1.25W, and the collector cutoff current is limited to 50nA.

 

The ZXTP25100CFHTA is housed in a compact SOT-23-3 surface-mount package, suitable for space-constrained PCB designs. It is supplied in cut tape and Digi-Reel packaging options for flexible assembly processes. The surface-mount design enables automated placement and reflow soldering.

ZXTP25100CFHTA Quick Information

Product Type: PNP Bipolar Transistor
Series: ZXTP
Canonical Name: PNP Bipolar Transistor, 100V, 1A, SOT-23-3
Subcategory: Single

ZXTP25100CFHTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

ZXTP25100CFHTA Estimated Pricing

Qty Low High
1+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

ZXTP25100CFHTA Features

  • PNP bipolar transistor for switching and amplification.
  • 100V collector-emitter breakdown voltage rating.
  • 1A maximum collector current capability.
  • Low 220mV saturation voltage at 1A.
  • Surface-mount SOT-23-3 package.

ZXTP25100CFHTA Applications

  • Suitable for general-purpose switching circuits.
  • Used in medium-speed signal amplification.
  • Can serve in power management applications.
  • Fits space-constrained PCB designs.

ZXTP25100CFHTA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the ZXTP25100CFHTA?

The collector-emitter breakdown voltage is 100V.

What is the maximum collector current?

The maximum collector current is 1A.

What package is the ZXTP25100CFHTA available in?

The SOT-23-3 surface-mount package.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain is 200 at 10mA collector current and 2V collector-emitter voltage.

What is the collector-emitter saturation voltage?

The saturation voltage is 220mV at 100mA base current and 1A collector current.

What is the transition frequency of the ZXTP25100CFHTA?

The transition frequency is 180MHz.

What is the maximum power dissipation?

The maximum power dissipation is 1.25W.

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