| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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31,020 pcs
|
31020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
334 pcs
|
334 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ZXMS6004DT8TA from Diodes Incorporated is a dual, self-protected, low-side N-channel enhancement mode Intellifet MOSFET. It is designed to be driven by 3.3V or 5V microcontrollers and is suitable for harsh environments where standard MOSFETs may not be rugged enough.
Key electrical specifications include a continuous drain-source voltage of 60V, a nominal load current of 1.2A (at 5V VIN), and an on-state resistance of 500 mΩ (as per datasheet) or 400 mΩ (as per manufacturer page). It also features a clamping energy of 210 mJ.
This MOSFET integrates several protection features independently per channel, including over-temperature shutdown, over-current protection, over-voltage protection (active clamp), and ESD protection. These features, along with auto-restart capabilities, make it ideal for loads with high in-rush currents such as lamps and motors, as well as general switching applications for 12V and 24V DC systems.
The device comes in a compact SM8 package suitable for surface mounting. Its logic-level input is compatible with both 3.3V and 5V microcontrollers, making it a versatile replacement for electromechanical relays and discrete circuits in automotive and industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-0.5V to +6V continuous.
SOT-223-8 surface mount package.
-40°C to +150°C.
1.2A at VIN=5V.
500mΩ (datasheet) or 400mΩ (manufacturer page).
Current limiting (fixed), over-temperature, and over-voltage protection with auto-restart.
0.7V to 1.5V.