| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
748 pcs
|
748 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| SVHC Present |
The ZXMN6A11G is a TRENCH MOSFET from Diodes Incorporated, designed for high efficiency, low voltage power management applications. It utilizes a unique structure that combines low on-resistance with fast switching speeds, making it ideal for DC-DC converters, power management functions, relay and solenoid driving, and motor control.
Key electrical characteristics include a Drain-Source Breakdown Voltage of 60V and a typical Static Drain-Source On-State Resistance of 0.14Ω at a gate-source voltage of 10V and drain current of 4.4A. The device operates within a temperature range of -55 to +150°C.
Packaged in a SOT-223 surface-mount package, the ZXMN6A11G offers convenient integration into various electronic designs. It is supplied on tape and reel in quantities of 1000 or 4000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage is 60V.
The typical Static Drain-Source On-State Resistance is 0.14Ω at VGS=10V and ID=4.4A.
The continuous drain current is 3.8A at VGS=10V and TA=25°C(b).
The operating and storage temperature range is -55 to +150°C.
The ZXMN6A11G is available in a SOT-223 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.