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ZXMN3F318DN8TA

The ZXMN3F318DN8TA is a 30V dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features low on-resistance and is suitable for applications requiring efficient switching.

✓ Total Stock: 5,000 pcs

ZXMN3F318DN8TA Available from 1 distributor

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	5,000 pcs On Request	5000 pcs	On Request	1	On Request	On Request	24+	On Request	On Request

ZXMN3F318DN8TA Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Diodes Incorporated
Mounting Type	Surface Mount
Package / Case	SO8
SVHC Present	Not Present

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ZXMN3F318DN8TA Description

Short technical summary and product information.

The ZXMN3F318DN8TA is a dual N-channel enhancement mode MOSFET designed for high efficiency and low on-resistance applications. It operates at a 30V drain-source breakdown voltage and is available in an SO8 package suitable for surface mounting.

This MOSFET offers low on-resistance values, with typical figures of 24mΩ at VGS=10V for Q1 and 35mΩ at VGS=10V for Q2. It also provides low on-resistance with a gate drive voltage as low as 4.5V, with typical values of 39mΩ for Q1 and 55mΩ for Q2 at this voltage. The continuous drain current capabilities are 7.3A for Q1 and 6A for Q2 under typical conditions.

This new generation dual Trench MOSFET from Zetex (now part of Diodes Incorporated) utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low power consumption applications where space is a constraint due to its compact SO8 package.

ZXMN3F318DN8TA Quick Information

Product Type: Dual N-Channel MOSFET

Series: ZXMN3F318

Canonical Name: ZXMN3F318DN8TA 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET

Subcategory: Dual N-Channel

ZXMN3F318DN8TA Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

ZXMN3F318DN8TA Features

30V drain-source breakdown voltage.
Low on-resistance achievable.
Suitable for 4.5V gate drive.
Dual N-channel enhancement mode.
SO8 surface mount package.

ZXMN3F318DN8TA Applications

Ideal for high efficiency applications.
Suitable for low power consumption circuits.
Used in space-constrained designs.
Efficient power switching circuits.

ZXMN3F318DN8TA FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 30V.

What is the typical on-resistance at VGS=10V?

The typical on-resistance is 24mΩ for Q1 and 35mΩ for Q2 at VGS=10V.

What is the typical on-resistance at VGS=4.5V?

The typical on-resistance is 39mΩ for Q1 and 55mΩ for Q2 at VGS=4.5V.

What is the continuous drain current rating?

The continuous drain current is 7.3A for Q1 and 6A for Q2.

What is the package type?

The package type is SO8.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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