| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,886 pcs
|
2886 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel | |
| Thermal Resistance |
The ZXMN10A08E6TA is an N-Channel Enhancement Mode MOSFET manufactured by ZETE. It is designed for high-efficiency power management applications, offering a unique structure that combines low on-resistance with fast switching speeds.
Key electrical characteristics include a maximum drain-source voltage of 100V. The on-resistance is specified at 250mΩ at a gate-source voltage of 10V, and 300mΩ at 6V. The continuous drain current is 1.9A at 25°C with VGS = 10V.
This MOSFET is housed in a compact SOT26 package, suitable for surface mount applications. It is RoHS 3 compliant, halogen and antimony-free, and qualified to AEC-Q101 standards for high reliability, making it a robust choice for demanding applications.
The maximum drain-source voltage is 100V.
The on-resistance is 250mΩ at VGS = 10V.
The continuous drain current is 1.9A at 25°C with VGS = 10V.
The ZXMN10A08E6TA is supplied in a SOT26 package.
Yes, the ZXMN10A08E6TA is RoHS 3 compliant.
The Moisture Sensitivity Level is 1.
Yes, the ZXMN10A08E6TA is halogen and antimony free.