Mfr Part #:

ZXMN10A08E6TA

Name: ZXMN10A08E6TA
Brand: Diodes Incorporated
SKU: ZXMN10A08E6TA
Availability: InStock

Mfr Name: Diodes Incorporated

Description:

MOSFET N-CH 100V 1.5A SOT26

✓ Total Stock: 28,690 pcs

ZXMN10A08E6TA Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	2,345 pcs On Request	2345 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
MW.FEP S.p.A. ✓ Non-Authorised Inventory information	2,345 pcs On Request	2345 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Flip Electronics ✓ Non-Authorised Inventory information	24,000 pcs On Request	24000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

Short technical summary and product information.

MOSFET N-CH 100V 1.5A SOT26

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Same form/fit/function or matching attribute configuration across different manufacturers.

ZXMN10A08E6TC

Diodes Incorporated

MOSFET N-CH 100V 1.5A SOT26

Diodes Incorporated

MOSFET BVDSS: 61V~100V SOT26 T&R

ZXMN10A08E6QTA

Diodes Incorporated

MOSFET BVDSS: 61V~100V SOT26 T&R

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Diodes Incorporated
Current	1.5A (Ta)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	405 pF @ 50 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1.1W (Ta)
Rds On (Max) @ Id, Vgs	250mOhm @ 3.2A, 10V
Supplier Device Package	SOT-26
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA