LTC4300-1IMS8#TRPBF
LT
The LTC4300-1IMS8#TRPBF is an Interface - Signal Buffers, Repeaters from LT. It features a RoHS3 Compliant status and comes in a MSOP-8 package.
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445 pcs
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445 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The ZXM64P02XTA is a P-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. This device features a low on-resistance of 0.09 Ohms at a gate-source voltage of -4.5V and a drain current of -2.4A. It has a drain-source breakdown voltage of -20V and a continuous drain current of -3.5A at 25°C ambient temperature.
Designed for high efficiency, low voltage power management applications, the ZXM64P02XTA boasts fast switching speeds and low gate drive requirements. Its thermal characteristics include a junction-to-ambient thermal resistance of 70°C/W under specific mounting conditions.
The MOSFET is housed in a compact MSOP-8 package, suitable for surface mounting. It operates within a temperature range of -55°C to +150°C. Key electrical parameters include a gate-source voltage range of ±12V and a power dissipation of 1.1W at 25°C.
Applications for this MOSFET include DC-DC converters, power management functions, disconnect switches, and motor control. The device is supplied on a reel, with a standard package quantity of 1000 units.
The minimum drain-source breakdown voltage is -20V.
The maximum continuous drain current is -3.5A at TA=25°C with VGS=4.5V, and -2.8A at TA=70°C.
The typical on-resistance is 0.09Ω at VGS=-4.5V and ID=-2.4A, and 0.13Ω at VGS=-2.7V.
It is available in an MSOP-8 surface mount package.
The operating and storage temperature range is -55°C to +150°C.
The typical gate-source threshold voltage is -0.7V at ID=-250μA.
The maximum power dissipation is 1.1W at TA=25°C on a standard FR4 PCB (still air), and 1.8W for short duration (t<10s) on FR4.