| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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87 pcs
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87 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The Diodes Incorporated ZXM64N02XTA is an N-Channel Enhancement Mode MOSFET designed for high efficiency, low voltage power management applications. It utilizes a unique structure that combines low on-resistance with fast switching speeds.
Key electrical characteristics include a Drain-Source Breakdown Voltage (V(BR)DSS) of 20V and a typical On-Resistance (RDS(ON)) of 0.040Ω at a continuous drain current (ID) of 5.4A. The device also features low threshold voltage and low gate drive requirements.
This MOSFET is housed in a low-profile MSOP8 package, suitable for surface mounting. Its design makes it ideal for applications such as DC-DC converters, power management functions, disconnect switches, and motor control.
Note: This part is marked as 'NOT RECOMMENDED FOR NEW DESIGN' in the datasheet.
The Drain-Source Breakdown Voltage (V(BR)DSS) is 20V.
The typical On-Resistance (RDS(ON)) is 0.040Ω.
The continuous drain current (ID) is 5.4A.
The ZXM64N02XTA is supplied in an MSOP8 package.
The tape width is 12mm.
Quantities per reel are 1000 units and 4000 units.
Reel sizes are 7 inches and 13 inches.