| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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120 pcs
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120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The ZXM64N02X from Diodes Incorporated is a high-density N-channel enhancement mode MOSFET. It utilizes a unique structure that combines low on-resistance with fast switching speeds, making it suitable for high efficiency, low voltage power management applications.
Key electrical characteristics include a Drain-Source Breakdown Voltage (V(BR)DSS) of 20V, a typical On-Resistance (RDS(ON)) of 0.040 Ohms at VGS = 4.5V and ID = 5.4A, and a continuous drain current (ID) of 5.4A at VGS = 10V and TA = +25°C. The device also features a low gate threshold voltage.
This MOSFET is housed in a low-profile MSOP-8 package, suitable for surface mounting. It is ideal for applications such as DC-DC converters, power management functions, disconnect switches, and motor control.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage (V(BR)DSS) is 20V.
The typical on-resistance (RDS(ON)) is 0.040 Ohms.
The continuous drain current (ID) is 5.4A.
The ZXM64N02X is available in an MSOP-8 package.
The standard package quantity is 1000 units.