| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 0214+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Package / Case | |
| Tape & Reel |
The Diodes Incorporated ZXM62N02E6TA is an N-Channel Enhancement Mode MOSFET designed for high-efficiency, low-voltage power management applications. It features a high-density structure that combines low on-resistance with fast switching speeds.
Key electrical specifications include a maximum drain-source voltage (BVDSS) of 20V. The on-resistance (RDS(ON)) is 0.1 Ohm at a gate-source voltage (VGS) of 4.5V, and 0.125 Ohm at VGS = 2.7V. The continuous drain current (ID) is rated at 3.2A at 25°C and 2.6A at 70°C (both at VGS = 4.5V).
This MOSFET is suitable for applications such as DC-DC converters, power management functions, disconnect switches, and motor control. It is housed in a compact SOT26 package, making it ideal for space-constrained designs. The device is also noted as being totally lead-free and fully RoHS compliant, as well as halogen and antimony free.
Mechanical data indicates the case is molded plastic with a UL Flammability Classification Rating of 94V-0. The terminals have a matte tin finish over a copper leadframe, solderable per MIL-STD-202, Method 208. The component has a moisture sensitivity level of 1.
The maximum drain-source voltage (BVDSS) is 20V.
The on-resistance (RDS(ON)) is 0.1 Ohm at VGS = 4.5V.
The continuous drain current (ID) is 3.2A at TA = +25°C with VGS = 4.5V.
The ZXM62N02E6TA is supplied in a SOT26 package.
Yes, the ZXM62N02E6TA is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.