| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,614 pcs
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3614 pcs | On Request | 1 | On Request | On Request | 0117+ | On Request | On Request |
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The ZVN3310FTA is a 100V N-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. This device utilizes a structure that combines low input capacitance with relatively low on-resistance, offering an intrinsically higher pulse current handling capability in linear mode compared to comparable trench technology structures.
Key electrical specifications include a Drain-Source Breakdown Voltage (VDS) of 100V, a continuous drain current (ID) of 100mA, and a static drain-source on-resistance (RDS(ON)) of 10 Ohms at a gate-source voltage (VGS) of 10V and drain current (ID) of 500mA. The gate threshold voltage (VGS(th)) ranges from 0.8V to 2.4V.
This MOSFET is designed for general-purpose applications, power management, disconnect switches, and telecoms. It features high pulse current handling in linear mode, low input capacitance, and fast switching speed. The device comes in a compact SOT-23 surface mount package.
Thermal characteristics include a power dissipation (PD) of 330mW at 25°C and an operating temperature range of -55°C to +150°C. The terminals have a matte tin finish, making them solderable per MIL-STD-202, Method 208.
The Drain-Source Breakdown Voltage (BVDSS) is 100V.
The maximum continuous drain current (ID) is 100mA.
The static drain-source on-resistance is 10 Ohms when VGS = 10V and ID = 500mA.
The ZVN3310FTA comes in a SOT-23 package.
The operating and storage temperature range is -55°C to +150°C.
Yes, the ZVN3310FTA is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
