| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,947 pcs
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8947 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ZVN3310FTA from Diodes Incorporated is a single N-Channel MOSFET designed for various electronic applications. It offers a drain-source breakdown voltage of 100V and a continuous drain current of 100mA.
Key electrical characteristics include a gate-source threshold voltage of 800mV and a drain-source on-resistance of 10 Ohms. The device operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 330mW.
This MOSFET is supplied in a surface-mount SOT-23-3 package, making it suitable for compact designs. It is manufactured using silicon technology and features enhancement mode channel operation. The typical turn-on delay time is 3ns and the typical turn-off delay time is 4ns, with rise and fall times of 5ns.
This component is part of the ZVN3310 series and is suitable for applications requiring a small-signal MOSFET with specific voltage and current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The continuous drain current is 100mA.
The drain-source on-resistance is 10 Ohms.
The gate-source threshold voltage is 800mV.
The operating temperature range is -55°C to +150°C.
The power dissipation is 330mW.
It is supplied in a SOT-23-3 package.