| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,597 pcs
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12597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Diodes Incorporated ZTX951STZ is a PNP Bipolar Junction Transistor (BJT) suitable for medium power applications. It offers a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of up to 4A. The transistor operates within a temperature range of -55°C to +150°C.
This component is housed in a TO-92 package, designed for through-hole mounting. Its typical transition frequency (fT) is 120 MHz, and it exhibits a minimum DC current gain (hFE) of 100 at 10mA and 1V. The power dissipation is rated at 1.2W.
Key electrical characteristics include a collector-base voltage (VCBO) of 100V and an emitter-base voltage (VEBO) of 6V. The ZTX951STZ is supplied in bulk packaging with a standard quantity of 4000 units per package.
This transistor is a reliable choice for various electronic circuits requiring amplification or switching in medium power ranges. Its robust construction and specified parameters make it suitable for integration into diverse electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the ZTX951STZ is 60 V.
The continuous collector current (IC) rating of the ZTX951STZ is 4 A.
The ZTX951STZ is supplied in a TO-92 package.
The operating temperature range for the ZTX951STZ transistor is -55°C to +150°C.
The minimum DC current gain (hFE) of the ZTX951STZ at 10mA and 1V is 100.