BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The ZTX603 is a medium power NPN silicon planar Darlington transistor manufactured by ZET. It is designed for applications requiring high current gain and moderate voltage handling capabilities.
Key electrical specifications include a collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 1A. The device offers a high static forward current transfer ratio (hFE), with a minimum gain of 2K at 50mA and up to 5K at 500mA, both measured at 5V VCE. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1V at 1A collector current and 1mA base current. The base-emitter saturation voltage (VBE(sat)) is 1.8V under the same conditions.
With a power dissipation rating of 1W at 25°C ambient temperature, the ZTX603 is suitable for various medium power switching and amplification tasks. It operates within a temperature range of -55°C to +200°C. The transistor is housed in a TO-92 compatible package, designed for through-hole mounting.
This component is ideal for general-purpose amplification and switching circuits where a robust Darlington configuration is beneficial. Its specifications make it a reliable choice for power control and signal amplification in electronic designs.
The maximum collector-emitter voltage is 80V.
The ZTX603 is packaged in a TO-92 through-hole package.
The operating and storage temperature range is -55°C to +200°C.
The minimum DC current gain is 2000 at 50mA, 5000 at 500mA, 2000 at 1A, and 500 at 2A (all at VCE=5V).
The maximum continuous collector current is 1A.
The typical transition frequency is 150MHz.
The maximum power dissipation is 1W at 25°C ambient temperature.