| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present |
The ZTX601STZ is an NPN Darlington transistor manufactured by Diodes Incorporated. It is designed for general-purpose switching and amplification applications requiring high current gain and medium voltage capability.
Key electrical specifications include a collector-emitter breakdown voltage of 160V, a maximum collector current of 1A, and a maximum power dissipation of 1W. The device offers a high minimum DC current gain (hFE) of 2000 at 500mA and 10V, and a transition frequency of 250MHz. The collector-emitter saturation voltage is 1.2V maximum at 10mA base current and 1A collector current.
The transistor is housed in an E-Line-3 package with formed leads, designed for through-hole mounting. It is rated for an operating junction temperature range of -55°C to 200°C, making it suitable for demanding thermal environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 160V.
The maximum collector current is 1A.
The operating junction temperature range is -55°C to 200°C.
It comes in an E-Line-3 package with formed leads for through-hole mounting.
The minimum DC current gain is 2000 at 500mA collector current and 10V collector-emitter voltage.
The transition frequency is 250MHz.