ZNBG6000Q20TC

The Diodes Incorporated ZNBG6000Q20TC is a specialized integrated circuit designed to meet the bias requirements of GaAs and HEMT FETs. Commonly used in applications such as satellite receiver LNBs, PMR, and cellular telephones, this device minimizes external component count. With the addition of two capacitors and resistors, it provides drain voltage and current control for external grounded source FETs.

This 6-stage bias controller generates a regulated negative rail required for FET gate biasing, operating from a single supply. The negative bias, at -3 volts, can also be used for other external circuits. The ZNBG6000/1 series splits control between two and four FETs, allowing input FETs to be adjusted for minimal noise while subsequent stages are optimized for maximum gain. The series offers a choice of drain voltage, with the ZNBG4001/6001 providing 2 volts.

Designed for unconditional stability over the full working temperature range (-40 to 70°C), the device requires recommended gate and drain capacitors for RF stability and minimal injected noise. It features dynamic FET protection, ensuring the gate drive does not exceed -3.5V to 0.7V under any conditions, including power transients. In case of a negative rail fault, the drain supply to the FETs will shut down to prevent excessive current flow.

The ZNBG6000Q20TC is available in a 20-pin QSOP surface mount package, suitable for minimizing device size. Its absolute maximum supply voltage is 15V, with a maximum supply current of 100mA. The drain current per FET is adjustable from 0 to 15mA.