| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Fujitsu Semiconductor YG226S8 is a fast recovery diode designed for high-speed switching applications. It offers a maximum reverse voltage of 800V and an average rectified output current of 5A.
Key electrical characteristics include a maximum forward voltage of 1.7V at 5A and a reverse leakage current of 5µA at 800V. The diode has a fast recovery time of 50ns under specific test conditions (IF=1A, IR=1A, R=0.1Ω) and a typical junction capacitance of 15pF at 4V and 1MHz.
This component is housed in an SC-67 package, suitable for through-hole mounting. Its operating temperature range is from -50°C, making it suitable for various environmental conditions.
The YG226S8 is designed for applications requiring efficient rectification and fast switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.32 | $1.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
SC-67 through-hole package.
1.7V maximum.
5µA maximum.
50ns maximum.
15pF typical at 4V, 1MHz.