| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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528 pcs
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528 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The WTC2302 is an N-Channel Enhancement Mode Power MOSFET manufactured by Weitronic Enterprise. It is designed with a super high dense cell structure for low RDS(ON), offering an RDS(ON) as low as 40mΩ at VGS=4.5V. This device boasts a Drain-Source Voltage (VDS) of 20V and a Continuous Drain Current (ID) of 2.3A at TA=25℃.
Key electrical characteristics include a Gate-Source Threshold Voltage (VGS(Th)) ranging from 0.6V to 1.2V and a typical forward transconductance (gfs) of 6.5S. The MOSFET also features low input capacitance (Ciss) of 427.12pF and output capacitance (Coss) of 80.56pF at 1MHz.
Packaged in a SOT-23 surface-mount package, the WTC2302 is suitable for applications requiring a compact and reliable power switching solution. Its rugged design and simple drive requirements make it a versatile component for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.32 | $1.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage (VDS) is 20V.
The Continuous Drain Current (ID) is 2.3A at TA=25℃.
The Gate-Source Threshold Voltage (VGS(Th)) ranges from 0.6V to 1.2V.
The typical Drain-Source On-Resistance (RDS(on)) is 40mΩ at VGS=4.5V and ID=2.8A.
The WTC2302 is available in a SOT-23 package.
The operating junction and storage temperature range is -55°C to +150°C.