| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,554 pcs
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3554 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
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1,669 pcs
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1669 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The WPM2026-3/TR is a P Channel MOSFET manufactured by Will Semiconductor. This component is designed for various electronic applications requiring efficient power switching.
Key electrical specifications include a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.9A at 25°C. The on-resistance (Rds On) is rated at a maximum of 65 mOhms at 3.2A and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is typically 1V at 250uA.
This MOSFET features a P Trench FET type and is housed in a SOT-23 (SOT-23-3) package, suitable for surface-mount applications. The maximum power dissipation is 600mW at ambient temperature (Ta).
Will Semiconductor provides this MOSFET with RoHS3 compliance, MSL 1 Unlimited rating, and REACH Unaffected status. It is supplied in a SOT-23 package.
The drain-to-source voltage (Vdss) for the WPM2026-3/TR is 20V.
The continuous drain current (Id) for the WPM2026-3/TR is 2.9A at 25°C.
The on-resistance (Rds On) is a maximum of 65 mOhms at 3.2A and 4.5V.
The gate threshold voltage (Vgs(th)) is 1V at 250uA.
The WPM2026-3/TR MOSFET is supplied in a SOT-23 (SOT-23-3) package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.