| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | 1933+ | On Request | On Request | |
|
2,264 pcs
|
2264 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| FET Type | |
| Power Dissipation | |
| Tape & Reel |
The WPM2015-3/TR is a P Channel MOSFET manufactured by Will Semiconductor. This component is designed for general-purpose applications requiring a 20V drain-source voltage and a continuous drain current of 2.2A at 25°C. It features a low on-resistance of 110 mΩ at 4.5V gate-source voltage and 2.7A drain current, with a typical gate threshold voltage of 810mV at 250uA.
Packaged in a compact SOT-23 (SOT-23-3) surface-mount case, the WPM2015-3/TR is suitable for applications where space is a constraint. The maximum power dissipation is rated at 800mW. This MOSFET is classified under RoHS3 compliance and has a Moisture Sensitivity Level (MSL) of 1.
This part is commonly supplied globally and is a reliable choice for power switching and amplification circuits in various electronic designs.
The drain-source voltage (Vds) for the WPM2015-3/TR is 20V.
The continuous drain current (Id) at 25°C for the WPM2015-3/TR is 2.2A.
The drain-source on-resistance (Rds(on)) is 110 mΩ at a gate-source voltage of 4.5V and a drain current of 2.7A.
The WPM2015-3/TR MOSFET is supplied in a SOT-23 package.
The WPM2015-3/TR is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the WPM2015-3/TR is 1.