| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,720 pcs
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2720 pcs | On Request | 1 | On Request | On Request | 2011 | On Request | On Request |
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The WPM1480-3/TR is a P Channel MOSFET manufactured by Will Semiconductor. This component is designed for various electronic applications requiring efficient power switching.
Key electrical specifications include a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 1.4A. The drain-source on-resistance (Rdson) is 110mΩ at 4.5V Vgs and 1A Id, with a power dissipation (Pd) of 290mW. The gate threshold voltage (Vgsth) is typically 600mV at 250uA.
This MOSFET features a typical input capacitance (Ciss) of 480pF at 10V Vds and a typical reverse transfer capacitance (Crss) of 51pF at 10V Vds. The total gate charge (Qg) is 6.5nC at 4.5V Vgs. It operates within a temperature range of -55°C to +150°C (Tj).
The WPM1480-3/TR comes in a SOT-323-3 package, suitable for surface-mount applications. It is RoHS3 compliant.
The drain-source voltage (Vdss) is 20V.
The continuous drain current (Id) is 1.4A.
The typical drain-source on-resistance (Rds(on)) is 110mΩ at Vgs=4.5V and Id=1A.
It is supplied in a SOT-323-3 package.
The operating junction temperature range is -55°C to +150°C.