| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,865 pcs
|
4865 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
230 pcs
|
230 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| FET Type | |
| Industrial Grade | |
| Input Capacitance | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The WNM4002-3/TR is an N-Channel MOSFET manufactured by WILLSEMI. This component is designed for industrial applications and comes in a compact SOT-523 surface-mount package.
Key electrical specifications include a drain-source breakdown voltage of 30V and a continuous drain current of 100mA. The on-state drain-source resistance is specified as 8Ω at 4V and 10mA, with a typical input capacitance of 13pF at 5V. The FET type is N-Channel.
This MOSFET is suitable for various electronic designs requiring a reliable N-Channel switching component. Its surface-mount package facilitates integration into compact circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 100mA.
The drain-source breakdown voltage is 30V.
The on-state drain-source resistance is 8Ω at 4V, 10mA.
The input capacitance is 13pF at 5V.
The WNM4002-3/TR is an N-Channel FET.
The WNM4002-3/TR is in a SOT-523 package.
The RoHS status is RoHS3 Compliant.