| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
109 pcs
|
109 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The WAYON WMO80N06T1 is a 60V N-Channel Enhancement Mode Power MOSFET designed using advanced power trench technology. This technology is optimized to minimize on-state resistance while maintaining excellent switching characteristics.
Key electrical specifications include a Drain-Source Voltage (VDS) of 60V, a continuous Drain Current (ID) of 80A at 25°C, and a maximum On-Resistance (RDS(on)) of less than 7.2mΩ at a Gate-Source Voltage (VGS) of 10V. The device is housed in a TO-252 package.
This MOSFET is suitable for applications requiring efficient power switching and low conduction losses. Its design focuses on balancing low on-resistance with robust switching capabilities, making it a versatile component for various power management circuits.
The maximum drain-source voltage is 60V.
The continuous drain current is 80A at 25°C.
The on-resistance is less than 7.2mΩ at VGS = 10V.
The WMO80N06T1 is available in a TO-252 package.
The standard package quantity is 2500 pieces on tape and reel.