| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,383 pcs
|
6383 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
3,667 pcs
|
3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,016 pcs
|
3016 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Winbond W971GG6SB25I is a high-density 1Gbit DRAM memory integrated circuit. It utilizes DDR2 SDRAM technology and offers a parallel interface for data access. The component operates at a clock frequency of 200 MHz and requires a supply voltage between 1.7V and 1.9V.
Designed for surface mounting, this IC comes in an 84-WBGA package. It features a memory organization of 64M x 16, an access time of 400 ps, and a write cycle time of 15ns. The operating temperature range is -40°C to 95°C (TC).
This volatile memory component is suitable for various embedded systems and applications requiring significant data storage capacity and fast access speeds.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1.7V to 1.9V.
84-TFBGA (supplier package 84-WBGA 8x12.5mm).
-40°C to 95°C (TC).
200 MHz.
64M x 16.
400 ps.
15 ns.