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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The VTP3310LAH from Excelitas Technologies is a planar silicon photodiode designed for applications requiring sensitivity in the visible and near-infrared spectrum. Encased in a clear, long T-1 end-looking package, this component features a small active area of 0.684 mm².
Key electrical characteristics include a typical responsivity of 0.015 A/(W/cm²) at 940 nm, a peak spectral response at 925 nm, and a broad spectral application range from 400 nm to 1150 nm. It exhibits a low dark current of a maximum of 35 nA at 50 V reverse bias and a high shunt resistance of 10 GΩ. The junction capacitance is a maximum of 25 pF at 3 V reverse bias, contributing to its fast speed of response.
This photodiode can be operated under reverse bias to decrease capacitance and increase response speed, or in photovoltaic mode when speed is less critical. It is well-suited for applications such as smoke detection, barcode scanning, light meters, and pulse oximetry, and is designed to be well-matched with Excelitas Infrared LED VTE Series.
The device operates within a temperature range of -40°C to 100°C, with storage also within this range. Its compact package and performance characteristics make it a versatile component for various optoelectronic sensing tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The spectral application range is from 400 nm to 1150 nm, with a peak spectral response at 925 nm.
The dark current is a maximum of 35 nA when operated with a reverse bias of 50 V.
The junction capacitance is a maximum of 25 pF when operated with a reverse bias of 3 V.
The operating temperature range is -40°C to 100°C.
The photodiode is supplied in a clear, long T-1 end-looking package.