| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
174 pcs
|
174 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The Vishay VSMY2850G is an infrared emitting diode designed for surface mounting. It utilizes GaAlAs surface emitter chip technology to provide high radiant intensity and high speed operation at a peak wavelength of 850 nm.
Key electrical specifications include a nominal forward current of 100mA and a forward voltage of 1.65V. The radiant intensity is typically 125 mW/sr at 100mA, with an angle of half intensity of ±10°. The diode has a fall time of 10 ns and a rise time of 10 ns, making it suitable for high pulse current operation.
This component is housed in a 2-SMD, Gull Wing package with dimensions of 2.3 x 2.3 x 2.8 mm. It operates within a temperature range of -40°C to +85°C. The VSMY2850G is designed for applications such as miniature light barriers, photointerrupters, optical switches, proximity sensors, and IR illumination.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status. The product is supplied on tape and reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak wavelength is 850 nm.
The nominal forward current is 100 mA.
The operating temperature range is -40°C to +85°C.
It is a 2-SMD, Gull Wing surface mount package.
The typical radiant intensity is 125 mW/sr at 100mA.
The angle of half intensity is ±10°.