| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
706 pcs
|
706 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The VS3628DE-G from Vergiga/威兆 is a Dual-N MOSFET designed for various electronic applications. It offers a Drain-Source Breakdown Voltage (BVDSS) of 10V and a continuous drain current (ID) ranging from 0.40A to 1.00A. The device exhibits a typical on-resistance of 7.40mR at VGS=4.5V and 9.40mR at VGS=2.5V.
Key electrical parameters include a gate threshold voltage (Vth) between 0.40V and 1.00V, and input capacitance (Ciss) of 1225pF. The power dissipation (PD) is rated between 0.40W and 1.00W.
This MOSFET is supplied in a PDFN3333-Dual package, suitable for surface mounting. Its specifications make it a candidate for switching and amplification circuits where a dual N-channel configuration is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.89 | $1.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (BVDSS) is 10V.
The continuous drain current (ID) is typically between 0.40A and 1.00A.
The typical on-resistance (RDS(on)) at VGS=4.5V is 7.40mR.
The gate threshold voltage (VTH) ranges from 0.40V to 1.00V.
It is supplied in a PDFN3333-Dual package.