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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
29,000 pcs
|
29000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Mounting Type | |
| Operating Temperature | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) |
The VS-C10ET07T-M3 is a Silicon Carbide (SiC) Schottky rectifier diode designed for high-efficiency power conversion. It features a maximum reverse voltage of 650V and an average rectified current of 10A. The forward voltage is typically 1.8V at 10A, and the device offers fast switching with a reverse recovery time of less than 500ns. The junction capacitance is 430pF at 1V and 1MHz. The diode operates over a junction temperature range of -55°C to 175°C. It is housed in a through-hole TO-220-2 package with a TO-220AC supplier device package, suitable for PCB mounting. This SiC Schottky diode is ideal for applications requiring high voltage and high temperature operation with low switching losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.26 | $5.26 |
| 10+ | $3.45 | $3.45 |
| 100+ | $2.57 | $2.57 |
| 500+ | $2.16 | $2.16 |
| 1,000+ | $1.99 | $1.99 |
| 2,000+ | $1.89 | $1.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
10A.
1.8V maximum.
Fast recovery less than 500ns.
Through-hole TO-220-2 (TO-220AC).
430pF at 1V and 1MHz.
-55°C to 175°C junction temperature.