VS-C10ET07T-M3 VS-C10ET07T-M3 is a 650V, 10A Silicon Carbide Schottky diode from Vishay General Semiconductor. It comes in a through-hole TO-220AC package.
Mfr Part #:

VS-C10ET07T-M3

Available from 2 distributors
Mfr Name: Vishay Dale
Vishay Dale
VS-C10ET07T-M3 is a 650V, 10A Silicon Carbide Schottky diode from Vishay General Semiconductor. It comes in a through-hole TO-220AC package.
Total Stock: 30,000 pcs
$ Price Range: $1.89 - $5.26

VS-C10ET07T-M3 Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
29,000 pcs
29000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

VS-C10ET07T-M3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Current
Mounting Type
Operating Temperature
Speed
Supplier Device Package
Tape & Reel
Technology
Voltage
Voltage - DC Reverse (Vr) (Max)

VS-C10ET07T-M3 Description

Short technical summary and product information.

The VS-C10ET07T-M3 is a Silicon Carbide (SiC) Schottky rectifier diode designed for high-efficiency power conversion. It features a maximum reverse voltage of 650V and an average rectified current of 10A. The forward voltage is typically 1.8V at 10A, and the device offers fast switching with a reverse recovery time of less than 500ns. The junction capacitance is 430pF at 1V and 1MHz. The diode operates over a junction temperature range of -55°C to 175°C. It is housed in a through-hole TO-220-2 package with a TO-220AC supplier device package, suitable for PCB mounting. This SiC Schottky diode is ideal for applications requiring high voltage and high temperature operation with low switching losses.

VS-C10ET07T-M3 Quick Information

Product Type: Silicon Carbide Schottky Diode
Canonical Name: VS-C10ET07T-M3 Silicon Carbide Schottky Diode
Subcategory: Silicon Carbide Schottky Diode

VS-C10ET07T-M3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

VS-C10ET07T-M3 Estimated Pricing

Qty Low High
1+ $5.26 $5.26
10+ $3.45 $3.45
100+ $2.57 $2.57
500+ $2.16 $2.16
1,000+ $1.99 $1.99
2,000+ $1.89 $1.89

Estimated market price range - modelled values for guidance only, not live distributor offers.

VS-C10ET07T-M3 Features

  • Silicon Carbide Schottky technology for low losses.
  • Rated for 650V reverse voltage.
  • 10A average rectified current capability.
  • Fast switching with <500ns recovery.
  • Operates from -55°C to 175°C.

VS-C10ET07T-M3 Applications

  • Used in power factor correction circuits.
  • Ideal for high-frequency switching power supplies.
  • Suitable for freewheeling diode applications.
  • Applied in solar inverters and EV chargers.

VS-C10ET07T-M3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the VS-C10ET07T-M3?

650V.

What is the average rectified current rating?

10A.

What is the forward voltage drop at 10A?

1.8V maximum.

What is the reverse recovery time?

Fast recovery less than 500ns.

What package does the VS-C10ET07T-M3 come in?

Through-hole TO-220-2 (TO-220AC).

What is the junction capacitance?

430pF at 1V and 1MHz.

What is the operating temperature range?

-55°C to 175°C junction temperature.

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