VS-C04ET07T-M3 VS-C04ET07T-M3 is a 650V, 4A Silicon Carbide Schottky diode from Vishay General Semiconductor. It features fast recovery time and is housed in a TO-220AC through-hole package.
Mfr Part #:

VS-C04ET07T-M3

Available from 2 distributors
Mfr Name: Vishay Dale
Vishay Dale
VS-C04ET07T-M3 is a 650V, 4A Silicon Carbide Schottky diode from Vishay General Semiconductor. It features fast recovery time and is housed in a TO-220AC through-hole package.
Total Stock: 29,000 pcs
$ Price Range: $1.00 - $3.17

VS-C04ET07T-M3 Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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28,000 pcs
28000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

VS-C04ET07T-M3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Current
Forward Voltage (Vf)
Lead Style
Mounting Type
Operating Temperature
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Supplier Device Package
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Technology
Voltage

VS-C04ET07T-M3 Description

Short technical summary and product information.

The VS-C04ET07T-M3 is a Silicon Carbide (SiC) Schottky diode manufactured by Vishay General Semiconductor. It is designed for high-efficiency power conversion applications requiring fast switching and low reverse recovery loss. The diode is rated for a maximum reverse voltage of 650V and an average rectified current of 4A.

 

The device features a low forward voltage drop of 1.7V at 4A, which contributes to reduced conduction losses. Its fast recovery time of less than 500ns ensures minimal switching losses, making it suitable for high-frequency circuits. The junction capacitance is 170pF at 1V and 1MHz.

 

The VS-C04ET07T-M3 is housed in a TO-220-2 through-hole package, also designated as TO-220AC. This package allows for easy mounting on printed circuit boards and provides adequate thermal performance. The operating temperature range is -55°C to 175°C, enabling use in demanding environments.

 

This SiC Schottky diode is ideal for power factor correction, switch-mode power supplies, DC-DC converters, and other applications where high efficiency and reliability are critical.

VS-C04ET07T-M3 Quick Information

Product Type: SiC Schottky Diode
Canonical Name: VS-C04ET07T-M3 - Silicon Carbide Schottky Diode, 650V, 4A, TO-220AC
Subcategory: SiC Schottky Diodes

VS-C04ET07T-M3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

VS-C04ET07T-M3 Estimated Pricing

Qty Low High
1+ $3.17 $3.17
10+ $2.04 $2.04
100+ $1.40 $1.40
500+ $1.19 $1.19
1,000+ $1.00 $1.00

Estimated market price range - modelled values for guidance only, not live distributor offers.

VS-C04ET07T-M3 Features

  • SiC Schottky technology for high efficiency.
  • 650V maximum reverse voltage rating.
  • 4A average rectified current capability.
  • Fast recovery time less than 500ns.
  • Through-hole TO-220AC package.

VS-C04ET07T-M3 Applications

  • Used in switch-mode power supplies.
  • Ideal for power factor correction.
  • Suitable for DC-DC converters.
  • Used in solar inverter systems.
  • Applicable to EV charging stations.

VS-C04ET07T-M3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage rating of the VS-C04ET07T-M3?

650V.

What is the average rectified current rating?

4A.

What is the forward voltage drop at rated current?

1.7V at 4A.

What is the reverse recovery time?

Fast recovery less than 500ns at >200mA.

What package does the VS-C04ET07T-M3 come in?

TO-220-2 (TO-220AC).

What is the operating temperature range?

-55°C to 175°C.

What is the junction capacitance?

170pF at 1V, 1MHz.

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