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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,000 pcs
|
28000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage (Vf) | |
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| Voltage |
The VS-C04ET07T-M3 is a Silicon Carbide (SiC) Schottky diode manufactured by Vishay General Semiconductor. It is designed for high-efficiency power conversion applications requiring fast switching and low reverse recovery loss. The diode is rated for a maximum reverse voltage of 650V and an average rectified current of 4A.
The device features a low forward voltage drop of 1.7V at 4A, which contributes to reduced conduction losses. Its fast recovery time of less than 500ns ensures minimal switching losses, making it suitable for high-frequency circuits. The junction capacitance is 170pF at 1V and 1MHz.
The VS-C04ET07T-M3 is housed in a TO-220-2 through-hole package, also designated as TO-220AC. This package allows for easy mounting on printed circuit boards and provides adequate thermal performance. The operating temperature range is -55°C to 175°C, enabling use in demanding environments.
This SiC Schottky diode is ideal for power factor correction, switch-mode power supplies, DC-DC converters, and other applications where high efficiency and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.17 | $3.17 |
| 10+ | $2.04 | $2.04 |
| 100+ | $1.40 | $1.40 |
| 500+ | $1.19 | $1.19 |
| 1,000+ | $1.00 | $1.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
4A.
1.7V at 4A.
Fast recovery less than 500ns at >200mA.
TO-220-2 (TO-220AC).
-55°C to 175°C.
170pF at 1V, 1MHz.