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VQ1000J The Vishay VQ1000J is an N-Channel MOSFET with a 60V drain-source breakdown voltage. It offers low on-resistance and direct logic-level interface capabilities.
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VQ1000J

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The Vishay VQ1000J is an N-Channel MOSFET with a 60V drain-source breakdown voltage. It offers low on-resistance and direct logic-level interface capabilities.
✓ Total Stock: 25 pcs
$ Price Range: $6.79

VQ1000J Available from 1 distributor

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✓ Non-Authorised
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25 pcs
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VQ1000J Specifications Quick View

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VQ1000J Description

Short technical summary and product information.

The Vishay VQ1000J is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source breakdown voltage of 60V and a low on-resistance of 2.5W at a gate-source voltage of 10V.

 

This MOSFET is suitable for direct logic-level interface with TTL/CMOS, making it ideal for driving relays, solenoids, lamps, and other components. Its low threshold voltage of 2.1V and low input capacitance of 22pF contribute to its fast switching speed of 7ns.

 

The VQ1000J is well-suited for battery-operated systems and solid-state relays due to its low-voltage operation and low leakage characteristics. It can be easily driven without a buffer, simplifying circuit design in high-speed applications.

VQ1000J Quick Information

Product Type: MOSFET
Series: VQ1000J
Canonical Name: VQ1000J N-Channel MOSFET
Subcategory: N-Channel

VQ1000J Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

VQ1000J Estimated Pricing

Qty Low High
1+ $6.79 $6.79

Estimated market price range - modelled values for guidance only, not live distributor offers.

VQ1000J Features

  • 60V drain-source breakdown voltage.
  • Low on-resistance of 2.5W.
  • Typical gate threshold voltage 2.1V.
  • Fast switching speed of 7ns.
  • Direct logic-level interface.

VQ1000J Applications

  • Ideal for relay and solenoid drivers.
  • Suitable for battery-operated systems.
  • Used in solid-state relay designs.
  • Applicable in high-speed circuits.

VQ1000J FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source breakdown voltage for the VQ1000J?

The VQ1000J has a minimum drain-source breakdown voltage of 60V.

What is the maximum on-resistance of the VQ1000J?

The maximum on-resistance is 2.5W when the gate-source voltage is 10V.

What is the typical gate threshold voltage for the VQ1000J?

The typical gate threshold voltage is 2.1V.

What is the input capacitance of the VQ1000J?

The typical input capacitance is 22pF.

How fast is the switching speed of the VQ1000J?

The VQ1000J has a fast switching speed of 7ns.

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