VP1206N2 The VP1206N2 from Supertex, Inc. is a P-Channel MOSFET designed for switching applications. It features a breakdown voltage of 60V and a maximum drain current of 2.5A.
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VP1206N2

Available from 1 distributors
Mfr Name: SI
SI
The VP1206N2 from Supertex, Inc. is a P-Channel MOSFET designed for switching applications. It features a breakdown voltage of 60V and a maximum drain current of 2.5A.
✓ Total Stock: 10 pcs
$ Price Range: $0.60

VP1206N2 Available from 1 distributor

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VP1206N2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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VP1206N2 Description

Short technical summary and product information.

The VP1206N2 is a P-Channel MOSFET manufactured by Supertex, Inc. This small signal MOSFET is designed for switching applications and operates in enhancement mode. It has a minimum breakdown voltage of 60V and can handle a maximum continuous drain current of 2.5A. The device exhibits a maximum drain-source on-resistance of 0.8000 ohm and a feedback capacitance of 65 pF.

 

Packaged in a TO-39 metal can with a round cylindrical shape, the VP1206N2 is designed for through-hole mounting. It has a maximum operating temperature of 150°C and a power dissipation capability of 6.5W. The configuration includes a built-in diode, making it suitable for various circuit designs.

 

This MOSFET is classified under other transistors and is a commercial qualification status component. Its terminal finish is tin-lead, with wire terminals located at the bottom.

VP1206N2 Quick Information

Product Type: MOSFET
Canonical Name: VP1206N2 P-Channel MOSFET
Subcategory: Small Signal MOSFET

VP1206N2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

VP1206N2 Estimated Pricing

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1+ $0.60 $0.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

VP1206N2 Features

  • P-Channel MOSFET for switching applications.
  • 60V minimum breakdown voltage.
  • 2.5A maximum continuous drain current.
  • 0.8000 ohm maximum drain-source on-resistance.
  • TO-39 package for through-hole mounting.

VP1206N2 Applications

  • Used in power supply filtering circuits
  • Ideal for decoupling in signal processing
  • Suitable for high-voltage applications
  • Applied in electronic circuit stabilization

VP1206N2 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the VP1206N2 MOSFET?

The minimum breakdown voltage for the VP1206N2 is 60V.

What is the maximum continuous drain current for the VP1206N2?

The VP1206N2 can handle a maximum continuous drain current of 2.5A.

What is the maximum operating temperature for the VP1206N2?

The maximum operating temperature for the VP1206N2 is 150°C.

What package type is the VP1206N2 MOSFET supplied in?

The VP1206N2 is supplied in a TO-39 package.

What is the FET technology used in the VP1206N2?

The VP1206N2 uses METAL-OXIDE SEMICONDUCTOR FET technology.

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