| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
132 pcs
|
132 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The VP0109N9 from SI is a P-Channel Enhancement-Mode Vertical DMOS FET designed for switching and amplifying applications. It utilizes advanced DMOS technology for high breakdown voltage, high input impedance, and fast switching speeds.
Key electrical characteristics include a maximum drain-to-source voltage of -90V and a maximum ON-state drain current of -0.5A. The ON-state resistance is a minimum of 8 Ohms at a gate-source voltage of -10V and a drain current of -0.5A.
This device is free from thermal runaway and thermally-induced secondary breakdown, offering excellent thermal stability. It is available in multiple package options including TO-220, TO-92, TO-52, TO-39, and Quad C-DIP.
Applications include motor controls, converters, amplifiers, switches, power supply circuits, and drivers for relays, solenoids, lamps, and bipolar transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.02 | $2.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage for the VP0109N9 is -90V.
The maximum ON-state drain current for the VP0109N9 is -0.5A.
The typical ON-state resistance of the VP0109N9 is 8 Ohms.
The VP0109N9 is available in TO-220, TO-92, TO-52, TO-39, and Quad C-DIP packages.
The operating and storage temperature range for the VP0109N9 is -55°C to +150°C.