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66,963 pcs
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66963 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics VNS1NV04DP-E is an OMNIFET II fully autoprotected Power MOSFET designed for applications from DC up to 50KHz. It utilizes ST's VIPower™ M0-3 technology and is intended as a replacement for standard Power MOSFETs.
Key features include linear current limitation with a typical value of 1.7A and a drain-source clamp voltage of 40V. The device also incorporates thermal shutdown and short circuit protection, making it suitable for harsh environments. Diagnostic feedback is available through the input pin.
This MOSFET has a maximum on-state resistance of 250 mOhm per device. It is supplied in a standard SO-8 package, compatible with standard power MOSFET applications. The integrated protection features help safeguard the chip during operation.
The VNS1NV04DP-E is designed for direct access to the gate of the power MOSFET, allowing for analog driving. It is also compatible with standard power MOSFET configurations.