| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Fault Protection | |
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The STMicroelectronics VNB35N07-E is a "OMNIFET" fully auto-protected power MOSFET. It is part of the VIPower M0 Technology family, suitable for replacement of standard power MOSFETs in DC to 50 KHz applications.
Key electrical characteristics include a drain-source voltage of 70V (internally clamped), a continuous drain current of 35A (internally limited), and a low static drain-source on-resistance of 0.028 Ω at 18A and 10V input. The device also features a forward transconductance of 20-25 S and an output capacitance of up to 1400 pF.
Protection features are built-in, including linear current limitation, thermal shut-down, and overvoltage clamp, safeguarding the chip in demanding environments. Fault feedback is available by monitoring the voltage at the input pin. The device supports analog driving through direct access to the gate of the power MOSFET.
This component is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting. Its thermal resistance junction-to-case is as low as 1 °C/W for the D2PAK package, with a total dissipation of 125W at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum input voltage (Vin) is 18 V.
The drain-source voltage (VDS) is internally clamped to 70 V.
The drain current (ID) is internally limited to 35 A.
The static drain-source on-resistance (RDS(on)) is 0.028 Ω max at Vin = 10 V, ID = 18 A.
The VNB35N07-E is available in D2PAK (TO-263-3), ISOWATT220, and PowerSO-10 packages.
The operating junction temperature is internally limited; the storage temperature range is -55 °C to 150 °C.
Yes, it includes fixed current limiting, over temperature shutdown, and over voltage clamping.