| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The VN2222LL is an N-Channel MOSFET manufactured by SIL. It is designed for various electronic applications and comes in a TO-92 package suitable for through-hole mounting.
Key electrical specifications include a maximum drain-source voltage (Vds) of 60V and a maximum gate-source voltage (Vgs) of 20V. The continuous drain current (Id) is rated at a maximum of 0.15A, with a typical on-resistance (Rds) of 10 Ohms. The gate-source threshold voltage (Vgs(th)) is typically 2.5V.
Thermal characteristics include a maximum power dissipation (Pd) of 0.4W and a maximum operating junction temperature (Tj) of 150°C. The component also has a typical input capacitance (Cd) of 60pF.
This MOSFET is suitable for applications requiring direct logic-level interfacing with TTL/CMOS, solid-state relays, and battery-operated systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the VN2222LL is 60V.
The maximum gate-source voltage (Vgs) for the VN2222LL is 20V.
The typical gate-source threshold voltage (Vgs(th)) for the VN2222LL is 2.5V.
The continuous drain current (Id) for the VN2222LL is a maximum of 0.15A.
The typical on-resistance (Rds) for the VN2222LL is 10 Ohms.
The VN2222LL comes in a TO-92 package.
The VN2222LL is suitable for direct logic-level interface, solid-state relays, and battery-operated systems.