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VN1210M The Siliconix VN1210M is an N-Channel Enhancement-Mode MOSFET transistor designed for high-speed circuits and low-voltage applications. It features a low on-resistance and fast switching speed.
Mfr Part #:

VN1210M

Available from 1 distributors
Mfr Name: SIL
SIL
The Siliconix VN1210M is an N-Channel Enhancement-Mode MOSFET transistor designed for high-speed circuits and low-voltage applications. It features a low on-resistance and fast switching speed.
✓ Total Stock: 210 pcs
$ Price Range: $2.27

VN1210M Available from 1 distributor

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✓ Non-Authorised
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210 pcs
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VN1210M Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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VN1210M Description

Short technical summary and product information.

The VN1210M from Siliconix is an N-Channel Enhancement-Mode MOSFET transistor. It is designed for applications requiring efficient switching and low on-resistance. Key electrical characteristics include a Drain-Source Breakdown Voltage of 120V and a Continuous Drain Current of up to 0.2A at 25°C.

 

This MOSFET offers a low Gate Threshold Voltage, making it easily driven without a buffer, suitable for direct logic-level interface with TTL/CMOS. Its fast switching speed of 10 ns and low input capacitance of 35 pF make it ideal for high-speed circuits. The device is available in a TO-237 package, suitable for surface mounting.

 

Applications for the VN1210M include driving relays, solenoids, lamps, and other loads in battery-operated systems and solid-state relays. Its low on-resistance and fast switching capabilities contribute to efficient power management in various electronic designs.

VN1210M Quick Information

Product Type: N-Channel MOSFET
Canonical Name: VN1210M N-Channel MOSFET
Subcategory: N-Channel

VN1210M Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

VN1210M Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

VN1210M Features

  • N-Channel Enhancement-Mode MOSFET
  • 120V Drain-Source Breakdown Voltage
  • Low On-Resistance
  • Fast Switching Speed: 10 ns
  • TO-237 Package

VN1210M Applications

  • Suitable for high-speed circuits
  • Ideal for battery-operated systems
  • Used for driving relays and solenoids
  • Direct logic-level interface capability

VN1210M FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the VN1210M?

The maximum continuous drain current for the VN1210M is 0.2A at 25°C.

What is the breakdown voltage of the VN1210M MOSFET?

The Drain-Source Breakdown Voltage for the VN1210M is 120V.

What is the typical on-resistance of the VN1210M?

The typical Drain-Source On-Resistance for the VN1210M is 3.3 Ohms at VGS = 10V and ID = 0.5A.

What package type is the VN1210M available in?

The VN1210M is available in a TO-237 package.

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