| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,353 pcs
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1353 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Microchip VN10KN3-G is an N-Channel MOSFET designed for various electronic applications. It offers a maximum continuous drain current of 310mA and a maximum drain-source voltage of 60V. The MOSFET has a low drain-source on-resistance of 7.5Ω, making it efficient for switching and amplification tasks.
The component is housed in a standard TO-92 package, suitable for through-hole mounting. It operates within a wide temperature range, from -55°C to 150°C. The enhancement mode channel provides flexibility in its application.
Key electrical characteristics include a typical forward voltage of 0.8V and a maximum power dissipation of 1W. These specifications make the VN10KN3-G a reliable choice for designers working with discrete semiconductor components.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 60V.
The maximum continuous drain current (Id) is 310mA.
The VN10KN3 is housed in a TO-92 through-hole package with 3 pins.
The operating temperature range is -55°C to 150°C.
The maximum drain-source on-resistance (Rds(on)) is 7.5Ω.