| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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The VN0106N6 is an N-Channel Enhancement-Mode Vertical DMOS Power FET from SI. This component is designed for various applications requiring efficient power switching.
Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of 60V and a maximum continuous Drain Current (ID(ON)) of 0.56A. The device is housed in a TO-39 package, suitable for through-hole mounting.
Features such as freedom from secondary breakdown and low power drive requirements make this MOSFET a versatile choice for circuit designers. Its design also facilitates paralleling for increased current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.92 | $1.92 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage (BVDSS) for the VN0106N6 is 60V.
The maximum continuous Drain Current (ID(ON)) for the VN0106N6 is 0.56A.
The VN0106N6 is available in a TO-39 package.
The VN0106N6 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the VN0106N6 is 1 Unlimited.