| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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400 pcs
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400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The VI30100SG-E3/4W from Vishay General Semiconductor is a high-voltage Trench MOS Barrier Schottky Rectifier designed for efficient operation. It features a low forward voltage drop of 0.76 V at 30 A and a maximum repetitive peak reverse voltage of 100 V.
This rectifier is built with Trench MOS Schottky technology, offering low power losses and high efficiency. It has a maximum average forward rectified current rating of 30 A and a peak forward surge current of 250 A. The operating junction and storage temperature range is -40°C to +150°C.
The VI30100SG-E3/4W is available in the TO-262AA package, suitable for through-hole mounting. Its mechanical data includes a molding compound that meets UL 94 V-0 flammability rating. This component is ideal for applications such as high frequency converters, switching power supplies, freewheeling diodes, OR-ing diodes, DC/DC converters, and reverse battery protection.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
30A.
0.76V typical.
TO-262AA (also available in TO-220AB, ITO-220AB, D2PAK).
250A at 8.3ms half sine-wave.
-40°C to 150°C.
Trench MOS Schottky.