| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,555 pcs
|
1555 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Peak Forward Surge Current |
The VB60170G is a dual high voltage Trench MOS Barrier Schottky rectifier designed for high frequency applications. It features Trench MOS Schottky technology, resulting in a low forward voltage drop and reduced power losses, contributing to high efficiency operation.
Key electrical characteristics include a maximum repetitive peak reverse voltage of 170 V and a maximum average forward rectified current of 30 A per diode. The surge current is rated at 210 A for 8.3 ms. The operating junction and storage temperature range is from -40 °C to +175 °C.
This rectifier is housed in a D2PAK (TO-263AB) surface mount package. The molding compound meets UL 94 V-0 flammability rating. Terminals are matte tin plated and solderable per J-STD-002 and JESD 22-B102.
Typical applications for the VB60170G include high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diodes, and reverse battery protection.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.00 | $3.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage is 170 V.
The maximum average forward rectified current is 30 A per diode.
The operating junction and storage temperature range is -40 °C to +175 °C.
The package type is D2PAK (TO-263AB).
The MSL rating is Level 1.