VB60120C-E3/8W The Vishay Dale VB60120C-E3/8W is a dual high voltage Trench MOS Barrier Schottky rectifier. It offers a 120V reverse voltage rating and 30A average forward current per diode.
Mfr Part #:

VB60120C-E3/8W

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale VB60120C-E3/8W is a dual high voltage Trench MOS Barrier Schottky rectifier. It offers a 120V reverse voltage rating and 30A average forward current per diode.
Total Stock: 1,600 pcs
$ Price Range: $1.25

VB60120C-E3/8W Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,600 pcs
1600 pcs On Request 1 On Request On Request On Request On Request On Request

VB60120C-E3/8W Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Case
Current
Current Rating (Maximum @ per device)
Current Rating (Maximum @ per diode)
Diode Configuration
Forward Voltage (@ IF = 5 A)
Forward Voltage (Typical/Nominal @ IF = 30 A)
Material
Maximum Repetitive Peak Reverse Voltage
Mounting Torque
Mounting Type
Non-Repetitive Avalanche Energy
Operating Temperature
Peak Forward Surge Current
Peak Repetitive Reverse Current
Speed
Supplier Device Package
Technology
Voltage
Voltage Rate of Change

VB60120C-E3/8W Description

Short technical summary and product information.

The Vishay Dale VB60120C-E3/8W is a dual high voltage Trench MOS Barrier Schottky rectifier designed for high efficiency operation. It features a low forward voltage drop, with a typical value of 0.71V at 30A and an ultra-low 0.41V at 5A.

 

This rectifier has a maximum repetitive peak reverse voltage of 120V and an average forward rectified current of 30A per diode (60A per device). It also handles a peak forward surge current of 300A. The operating junction and storage temperature range is -40°C to 150°C.

 

Designed with Trench MOS Schottky technology, this component is suitable for use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diodes, DC/DC converters, and reverse battery protection. It comes in a TO-263AB (D2PAK) surface mount package.

 

The molding compound meets UL 94 V-0 flammability rating. Terminals are matte tin plated and solderable per J-STD-002 and JESD 22-B102. The E3 suffix indicates RoHS compliance and meets JESD 201 class 1A whisker test.

VB60120C-E3/8W Quick Information

Product Type: Dual High Voltage Trench MOS Barrier Schottky Rectifier
Canonical Name: Vishay Dale VB60120C-E3/8W Dual High Voltage Trench MOS Barrier Schottky Rectifier
Subcategory: Schottky Rectifier

VB60120C-E3/8W Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

VB60120C-E3/8W Estimated Pricing

Qty Low High
1+ $1.25 $1.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

VB60120C-E3/8W Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop.
  • High efficiency operation.
  • 120V reverse voltage rating.
  • TO-263AB surface mount package.

VB60120C-E3/8W Applications

  • High frequency converters.
  • Switching power supplies.
  • Freewheeling diodes.
  • OR-ing diode applications.
  • DC/DC converters.

VB60120C-E3/8W FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum repetitive peak reverse voltage (VRRM) of the VB60120C-E3/8W?

The maximum repetitive peak reverse voltage is 120V.

What is the average forward current rating of this diode array?

The maximum average forward rectified current is 60A per device and 30A per diode.

What is the forward voltage drop at 30A?

The typical forward voltage is 0.71V at 30A, and the nominal forward voltage is 950mV at 30A.

What package does the VB60120C-E3/8W come in?

It is available in a TO-263AB (D2PAK) surface mount package.

What is the peak surge current rating?

The peak forward surge current is 300A for an 8.3ms single half sine-wave.

What is the operating temperature range?

The operating junction and storage temperature range is -40°C to +150°C.

What is the diode configuration?

The device contains 1 pair of Schottky diodes in a common cathode configuration.

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