| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,652 pcs
|
8652 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8,652 pcs
|
8652 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The V4PAN50-M3/I is a Schottky rectifier diode from Vishay, designed for high efficiency power conversion. It features Trench MOS Barrier Schottky technology, offering a low forward voltage drop of 0.46V typical at 4A and 125°C. The diode is rated for a maximum repetitive reverse voltage of 50V and a maximum DC forward current of 3A, with a typical average forward current of 4A.
This diode can withstand peak forward surge currents up to 80A (10ms half sine-wave) and has a reverse leakage current of 600µA. It operates over a junction temperature range of -40°C to 150°C. The device is housed in a compact DO-221BC (SMPD) surface mount package, making it suitable for space-constrained applications.
Typical applications include high frequency switching power supplies, freewheeling diodes in DC-DC converters, and reverse polarity protection. The fast recovery characteristic (≤500ns) enables efficient switching in high speed circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 volts.
3A maximum DC forward current, with a typical average forward current of 4A.
0.46V typical at IF=4A and TA=125°C, and 510mV typical from manufacturer sheet.
DO-221BC (SMPD) surface mount package.
80A for a 10ms single half sine-wave.
-40°C to 150°C.
Trench MOS Barrier Schottky.