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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base P/N | |
| Breakdown Voltage | |
| Current | |
| Current Rating (Maximum @ per device) | |
| Current Rating (Maximum @ per diode) | |
| Diode Configuration | |
| Diode variations | |
| Forward Voltage (Typical @ IF = 10 A, TA = 25 °C) | |
| Forward Voltage (Typical @ IF=20 A) | |
| Forward Voltage (Typical @ IF=5 A) | |
| Forward Voltage (Typical @ IF=5 A, TA=25 °C) | |
| Halogen Free | |
| M3 suffix | |
| Maximum Repetitive Peak Reverse Voltage | |
| Molding Compound | |
| Mounting Torque | |
| Mounting Type | |
| Non-Repetitive Avalanche Energy | |
| Operating Temperature | |
| Peak Forward Surge Current | |
| Peak Repetitive Reverse Current | |
| Polarity | |
| Solder Dip | |
| Speed | |
| Supplier Device Package | |
| Technology | |
| Terminals | |
| Voltage | |
| Voltage Rate of Change |
The Vishay Dale V40100PGW-M3/4W is a dual high-voltage Trench MOS Barrier Schottky rectifier designed for high efficiency operation. It features a low forward voltage drop, with a typical value of 0.49V at 5A and 0.58V at 10A, and a maximum of 0.67V at 20A. The device has a maximum repetitive peak reverse voltage of 100V and a maximum average forward rectified current of 40A per device (20A per diode).
This rectifier utilizes Trench MOS Schottky technology and is housed in a TO-3PW package. It is suitable for applications such as high frequency converters, switching power supplies, freewheeling diodes, OR-ing diodes, DC/DC converters, and reverse battery protection. The operating junction and storage temperature range is -40°C to +150°C. The molding compound meets UL 94 V-0 flammability rating, and the terminals are matte tin plated.
The V40100PGW-M3/4W is halogen-free and RoHS-compliant. It has a peak forward surge current rating of 250A and a non-repetitive avalanche energy of 250mJ per diode. The voltage rate of change is rated at 10,000 V/μs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.25 | $1.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage is 100V.
The maximum average forward rectified current is 40A per device or 20A per diode.
The typical forward voltage at 5A is 0.49V.
The operating junction and storage temperature range is -40°C to +150°C.
The component is supplied in a TO-3PW package.
It uses Trench MOS Schottky technology.
Yes, the component is halogen-free.