| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,244 pcs
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2244 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Package / Case | |
| Peak Forward Surge Current |
The Vishay V30100C is a dual high voltage Trench MOS Barrier Schottky rectifier. It utilizes Trench MOS Schottky technology to achieve a low forward voltage drop (VF) of 0.455 V at 5 A and low power losses, contributing to high efficiency operation.
Key electrical specifications include a maximum repetitive peak reverse voltage (VRRM) of 100 V and a maximum average forward rectified current (IF(AV)) of 30 A per device (15 A per diode). The peak forward surge current (IFSM) is rated at 160 A for an 8.3 ms single half-sine wave. The operating junction and storage temperature range is -40 °C to +150 °C.
This rectifier is suitable for use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diodes, and reverse battery protection. The device comes in TO-220AB and TO-262AA packages. The molding compound meets UL 94 V-0 flammability rating and is halogen-free, RoHS-compliant. Terminals are matte tin plated and solderable per J-STD-002 and JESD 22-B102.
The maximum repetitive peak reverse voltage (VRRM) for the V30100C is 100 V.
The maximum average forward rectified current is 30 A per device or 15 A per diode.
The typical forward voltage drop at IF = 5 A and TA = 25 °C is 0.516 V.
The operating junction and storage temperature range is -40 °C to +150 °C.
The V30100C is available in TO-220AB and TO-262AA packages.