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V20120C-E3/4W The Vishay Dale V20120C-E3/4W is a dual high voltage Trench MOS Barrier Schottky rectifier. It offers a 120V reverse voltage rating and a 10A average forward current per diode.
Mfr Part #:

V20120C-E3/4W

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale V20120C-E3/4W is a dual high voltage Trench MOS Barrier Schottky rectifier. It offers a 120V reverse voltage rating and a 10A average forward current per diode.
✓ Total Stock: 38,020 pcs
$ Price Range: $1.25

V20120C-E3/4W Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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38,020 pcs
On Request
38020 pcs On Request 1 On Request On Request On Request On Request On Request
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V20120C-E3/4W Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Diode Configuration
Material
Mounting Type
Operating Temperature
Peak Forward Surge Current
Speed
Supplier Device Package
Technology
Voltage
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V20120C-E3/4W Description

Short technical summary and product information.

The Vishay Dale V20120C-E3/4W is a dual high voltage Trench MOS Barrier Schottky rectifier designed for high efficiency operation. It features a low forward voltage drop of 0.64V at 10A and 0.54V at 5A, minimizing power losses.

 

This rectifier has a maximum repetitive peak reverse voltage of 120V and a peak forward surge current of 120A. The operating junction and storage temperature range is -40°C to 150°C. The circuit configuration is a common cathode.

 

Packaged in a TO-220-3 through-hole package, the V20120C-E3/4W is suitable for applications such as high frequency converters, switching power supplies, freewheeling diodes, OR-ing diodes, DC/DC converters, and reverse battery protection.

 

The molding compound meets UL 94 V-0 flammability rating. Terminals are matte tin plated and solderable per J-STD-002 and JESD 22-B102.

V20120C-E3/4W Quick Information

Product Type: Diode Rectifier Array
Canonical Name: Vishay V20120C-E3/4W Dual High Voltage Trench MOS Barrier Schottky Rectifier
Subcategory: Diode Rectifier Array

V20120C-E3/4W Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

V20120C-E3/4W Estimated Pricing

Qty Low High
1+ $1.25 $1.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

V20120C-E3/4W Features

  • Dual high voltage Trench MOS Schottky rectifier.
  • Ultra low forward voltage drop.
  • High efficiency operation.
  • TO-220-3 through-hole package.
  • Suitable for power supply applications.

V20120C-E3/4W Applications

  • High frequency converters.
  • Switching power supplies.
  • Freewheeling diodes.
  • OR-ing diode applications.
  • DC/DC converters.

V20120C-E3/4W FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum repetitive peak reverse voltage of the V20120C-E3/4W?

120 V.

What is the maximum average forward rectified current per diode?

10 A per diode.

What is the typical forward voltage at 10 A?

0.64 V.

What package options are available for this diode array?

TO-220AB, ITO-220AB, D2PAK (TO-263AB), and TO-262AA.

What is the peak forward surge current rating?

120 A at 8.3 ms single half sine-wave.

What is the non-repetitive avalanche energy rating?

80 mJ per diode at TJ = 25 °C, L = 60 mH.

What is the operating junction temperature range?

-40°C to 150°C.

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